Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor

1999 ◽  
Vol 75 (19) ◽  
pp. 2948-2950 ◽  
Author(s):  
Nobuyuki Sugii ◽  
Kiyokazu Nakagawa ◽  
Shinya Yamaguchi ◽  
Masanobu Miyao
Keyword(s):  
Metal Oxide ◽  
Buffer Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
Effect Transistor

High-Mobility p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor on Strained Si

1994 ◽  
Vol 33 (Part 1, No. 4B) ◽  
pp. 2412-2414 ◽  
Author(s):  
Deepak K. Nayak ◽  
Jason C. S. Woo ◽  
Jin S. Park ◽  
Kang L. Wang ◽  
Ken P. MacWilliams
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
Effect Transistor

Influence of dislocations in strained Si∕relaxed SiGe layers on n+∕p-junctions in a metal-oxide-semiconductor field-effect transistor technology

2005 ◽  
Vol 87 (19) ◽  
pp. 192112 ◽  
Author(s):  
Geert Eneman ◽  
Eddy Simoen ◽  
Romain Delhougne ◽  
Peter Verheyen ◽  
Roger Loo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
Effect Transistor

scholarly journals A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistor

2015 ◽  
Vol 64 (6) ◽  
pp. 067305
Author(s):  
L Yi ◽  
Zhang He-Ming ◽  
Hu Hui-Yong ◽  
Yang Jin-Yong ◽  
Yin Shu-Juan ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
Effect Transistor
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