Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor
1993 ◽
Vol 64
(10)
◽
pp. 3024-3025
◽
2009 ◽
Vol 48
(7)
◽
pp. 071204
◽
1997 ◽
Vol 36
(Part 1, No. 6B)
◽
pp. 4139-4142
◽
1993 ◽
Vol 32
(Part 1, No. 1B)
◽
pp. 419-422
◽
1995 ◽
Vol 34
(Part 1, No. 7A)
◽
pp. 3413-3417
Keyword(s):