scholarly journals Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor

2011 ◽  
Vol 60 (2) ◽  
pp. 027305
Author(s):  
Wu Tie-Feng ◽  
Zhang He-Ming ◽  
Wang Guan-Yu ◽  
Hu Hui-Yong
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Tunneling Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
Predicting Model ◽  
Effect Transistor ◽  
Gate Tunneling

High-Mobility p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor on Strained Si

1994 ◽  
Vol 33 (Part 1, No. 4B) ◽  
pp. 2412-2414 ◽  
Author(s):  
Deepak K. Nayak ◽  
Jason C. S. Woo ◽  
Jin S. Park ◽  
Kang L. Wang ◽  
Ken P. MacWilliams
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
Effect Transistor

scholarly journals A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistor

2015 ◽  
Vol 64 (6) ◽  
pp. 067305
Author(s):  
L Yi ◽  
Zhang He-Ming ◽  
Hu Hui-Yong ◽  
Yang Jin-Yong ◽  
Yin Shu-Juan ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
Effect Transistor
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