Comparison of the electrical and thermal stability of stress- or radiation-induced leakage current in thin oxides

2000 ◽  
Vol 76 (9) ◽  
pp. 1158-1160 ◽  
Author(s):  
P. Riess ◽  
M. Ceschia ◽  
A. Paccagnella ◽  
G. Ghibaudo ◽  
G. Pananakakis
Keyword(s):  
Thermal Stability ◽  
Leakage Current ◽  
Radiation Induced ◽  
Thermal Stability Of

Sputtered Cu Films Containing Various Insoluble Substances for Advanced Barrierless Metallization

2007 ◽  
Vol 539-543 ◽  
pp. 3497-3502 ◽  
Author(s):  
J.P. Chu ◽  
C.H. Lin
Keyword(s):  
Thermal Stability ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
The Other ◽  
Oxide Semiconductor ◽  
Good Thermal Stability ◽  
Cu Films ◽  
Pure Cu ◽  
Thermal Stability Of

Sputtered Cu films containing various insoluble substances, such as Cu(W2.3), Cu(Mo2.0), Cu(Nb0.4), Cu(C2.1) and Cu(W0.4C0.7), are examined in this study. These films are prepared by magnetron sputtering, followed by thermal annealing. The crystal structure, microstructure, SIMS depth-profiles, leakage current, and resistivity of the films are investigated. Good thermal stability of these Cu films is confirmed with focused ion beam, X-ray diffractometry, SIMS, and electrical property measurements. After annealing at 400°C, obvious drops in resistivity, to ~3.8 μ-cm, are seen for Cu(W) film, which is lower than the other films. An evaluation of the leakage current characteristic from the SiO2/Si metal-oxide-semiconductor (MOS) structure also demonstrates that Cu with dilute tungsten is more stable than the other films studied. These results further indicate that the Cu(W) film has more thermal stability than the Cu(Mo), Cu(Nb), Cu(C), Cu(WC) and pure Cu films. Therefore, the film is suitable for the future barrierless metallization.

Epitaxial Growth and Thermal Stability of CoSi2 Layer on (100) Si from Co-C Films without Capping Layer

1999 ◽  
Vol 564 ◽  
Author(s):  
Hwa Sung Rhee ◽  
Dong Kyun Sohn ◽  
Byung Tae Ahn
Keyword(s):  
Thermal Stability ◽  
Epitaxial Growth ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carbon Film ◽  
Si Substrate ◽  
Capping Layer ◽  
Potential Applicability ◽  
Thermal Stability Of

AbstractA uniform epitaxial CoSi2 layer was grown on (100) Si substrate by rapid thermal annealing at 800°C in N2 ambient without capping layers from an amorphous cobalt-carbon film. The amorphous cobalt-carbon film was deposited on Si substrate by the pyrolysis of cyclopentadienyl dicarbonyl cobalt. Co(η5-C5H5)(CO)2. at 350°C. The leakage current measured on the junction, fabricated with the epitaxial CoSi2 layer and annealed at 1000°C for 30 s. was as low as that of the as-fabricated junction without silicide. indicating that epitaxial (100) CoSi2 is thermally stable at temperatures even above 1000°C and has a potential applicability to the salicide process in sub-half micron devices.

Nature and thermal stability of radiation-induced defects in zirconium hydride

1976 ◽  
Vol 40 (4) ◽  
pp. 356-359 ◽  
Author(s):  
P. G. Pinchuk ◽  
V. N. Bykov ◽  
G. A. Birzhevoi ◽  
Yu. V. Alekseev ◽  
A. G. Vakhtin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Zirconium Hydride ◽  
Radiation Induced ◽  
Induced Defects ◽  
Thermal Stability Of

Thermal stability of radiation-induced optical absorption in quartz

1976 ◽  
Vol 19 (6) ◽  
pp. 780-782
Author(s):  
V. G. Zubov ◽  
N. G. Kirillova ◽  
N. D. Kundikova ◽  
L. P. Osipova
Keyword(s):  
Thermal Stability ◽  
Optical Absorption ◽  
Radiation Induced ◽  
Thermal Stability Of

scholarly journals Люминесценция дефектов F-типа и их термическая стабильность в сапфире, облученном импульсными ионными пучками

2020 ◽  
Vol 128 (2) ◽  
pp. 211
Author(s):  
Д.В. Ананченко ◽  
С.В. Никифоров ◽  
Г.Р. Рамазанова ◽  
Р.И. Баталов ◽  
Р.М. Баязитов ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Optical Absorption ◽  
Single Crystals ◽  
Ion Beam ◽  
Pulsed Cathodoluminescence ◽  
Ion Beam Treatment ◽  
Radiation Induced ◽  
The Stability ◽  
Induced Defects ◽  
Thermal Stability Of

Luminescence and thermal stability of defects formed in alpha-Al2O3 single crystals under pulsed ion beam treatment (C+/H+ ions with an energy 300 keV, pulse duration 80 ns) were investigated. This type of irradiation leads to the intensive generation of both single F- and F+-centers and more complex defects (F2-type aggregate centers or vacancy-impurity complexes) in alpha-Al2O3. It was confirmed by the results of optical absorption, photoluminescence, and pulsed cathodoluminescence measurements. The thermal stability of F-type defects formed in alpha-Al2O3 under the pulsed ion beam treatment is comparable to the stability of radiation-induced defects in neutron-irradiated samples.

scholarly journals Erratum to: The thermal stability of radiation-induced defects in illite

2015 ◽  
Vol 43 (1) ◽  
pp. 31-31
Author(s):  
T. Riegler ◽  
T. Allard ◽  
D. Beaufort ◽  
J.-L. Cantin ◽  
H. J. von Bardeleben
Keyword(s):  
Thermal Stability ◽  
Radiation Induced ◽  
Induced Defects ◽  
Thermal Stability Of

The thermal stability of radiation-induced defects in illite

2015 ◽  
Vol 43 (1) ◽  
pp. 23-30 ◽  
Author(s):  
T. Riegler ◽  
T. Allard ◽  
D. Beaufort ◽  
J.-L. Cantin ◽  
H. J. von Bardeleben
Keyword(s):  
Thermal Stability ◽  
Radiation Induced ◽  
Induced Defects ◽  
Thermal Stability Of
Sign in / Sign up

Export Citation Format

Share Document