Epitaxial Growth and Thermal Stability of CoSi2 Layer on (100) Si from Co-C Films without Capping Layer

1999 ◽  
Vol 564 ◽  
Author(s):  
Hwa Sung Rhee ◽  
Dong Kyun Sohn ◽  
Byung Tae Ahn
Keyword(s):  
Thermal Stability ◽  
Epitaxial Growth ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carbon Film ◽  
Si Substrate ◽  
Capping Layer ◽  
Potential Applicability ◽  
Thermal Stability Of

AbstractA uniform epitaxial CoSi2 layer was grown on (100) Si substrate by rapid thermal annealing at 800°C in N2 ambient without capping layers from an amorphous cobalt-carbon film. The amorphous cobalt-carbon film was deposited on Si substrate by the pyrolysis of cyclopentadienyl dicarbonyl cobalt. Co(η5-C5H5)(CO)2. at 350°C. The leakage current measured on the junction, fabricated with the epitaxial CoSi2 layer and annealed at 1000°C for 30 s. was as low as that of the as-fabricated junction without silicide. indicating that epitaxial (100) CoSi2 is thermally stable at temperatures even above 1000°C and has a potential applicability to the salicide process in sub-half micron devices.

Stress Enhanced Arsenic Diffusion In Titanium Salicided Junctions By Implantation Into C49 TiSi2 and Rapid Thermal Annealing

1999 ◽  
Vol 564 ◽  
Author(s):  
Dong Kyun Sohn ◽  
Ji-Soo Park ◽  
Jong-Uk Bae ◽  
Yun-Jun Hub ◽  
Jin Won Park
Keyword(s):  
Tensile Stress ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Affinity ◽  
Si Substrate ◽  
High Chemical ◽  
Reverse Leakage Current ◽  
Shallow Junctions ◽  
Diffusion Source

AbstractWe studied reverse leakage current in n+/p titanium-salicided shallow junctions using C49 Ti-silicide as a diffusion source. After Ti deposition, rapid thermal annealing (RTA) was performed to form the C49 Ti-silicide. Subsequently, arsenic ions were implanted and a 2nd RTA was carried out at 850 °C to form the low resistivity C54 Ti-silicide. In spite of no drive-in process following the 2nd annealing, the implanted As diffused well into Si substrate and the reverse leakage current of the n+/p junctions was reduced to two orders of magnitude lower. Since the high chemical affinity of As to Ti-silicide trapped the dopant in the silicide, it has been known that Ti or Ti-silicide cannot be used as a diffusion source. However, in this work, we found that the C49 Ti-silicide acted as a diffusion source of As ions. The reason of fast diffusivity is attributed to the generation of high tensile stress induced by As implantation.

Defect Generation During Epitaxial Growth of CoSi2 on Miniature Sized (100) Si Substrate and its Effect on Electrical Properties

1995 ◽  
Vol 402 ◽  
Author(s):  
Jeong Soo Byun ◽  
Jeong Min Seon ◽  
Jin Won Park ◽  
Hyunsang Hwang ◽  
Jae Jeong Kim-
Keyword(s):  
Electrical Properties ◽  
Epitaxial Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Gate Oxide ◽  
Si Substrate ◽  
Device Failure ◽  
Shallow Junction ◽  
Defect Generation ◽  
Substrate Defects

AbstractSelf-aligned silicide (salicide) formation of epitaxial CoSi2, using a Co/Ti bilayer, on linear oxide (SiO2) patterned (100)Si substrate has been investigated. Rapid thermal annealing (RTA) at 550°C resulted in the lateral encroachment of silicide in the Si under the edge of the oxide. After RTA at 900°C, even though an epitaxial CoSi2 layer was formed on the Si substrate, defects such as lateral encroachment and voids were generated under the edge of the oxide. It was found that such defects lead to device failure due to the deterioration of the gate oxide and the shallow junction.

Thermal Stability of GdScO3 Dielectric Films Grown on Si and InAlN/GaN Substrates

2009 ◽  
Vol 1155 ◽  
Author(s):  
Karol Fröhlich ◽  
Andrej Vincze ◽  
Edmund Dobročka ◽  
Kristina Hušeková ◽  
Karol Čičo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapor ◽  
Grazing Incidence ◽  
Organic Chemical ◽  
Strong Reaction ◽  
X Ray ◽  
Tof Sims ◽  
Thermal Stability Of

AbstractWe present analysis of thermal stability of thin GdScO3 films grown on silicon and InAlN/GaN substrates. The GdScO3 films were prepared by liquid injection metal organic chemical vapor deposition at 600 °C. The films were processed after deposition by rapid thermal annealing in nitrogen ambient at 900, 1000 and 1100 °C during 10 s. In addition, annealing of the GdScO3 films on InAlN/GaN substrate at 700 °C during 3 hours was performed. The samples were analyzed by grazing incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR) and time-of-flight secondary ion mass spectroscopy (ToF SIMS). GIXRD confirmed that the as-deposited GdScO3 films were amorphous. Recrystallization of the films on both substrates occurred at 1100 °C. ToF SIMS depth profile of the films annealed at 1000 °C indicated strong reaction of the GdScO3 film with the Si substrate. For the InAlN/GaN substrate rapid thermal annealing at 900 °C induced diffusion of the In and Al atoms into the top GdScO3 layer. Thermal treatment at 700 °C for 3 hours presents upper limit of the acceptable thermal budget for the GdScO3/InAlN interface.

Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing

1997 ◽  
Vol 81 (5) ◽  
pp. 2229-2235 ◽  
Author(s):  
R. Senderak ◽  
M. Jergel ◽  
S. Luby ◽  
E. Majkova ◽  
V. Holy ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Stability Of
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