Nature and thermal stability of radiation-induced defects in zirconium hydride

1976 ◽  
Vol 40 (4) ◽  
pp. 356-359 ◽  
Author(s):  
P. G. Pinchuk ◽  
V. N. Bykov ◽  
G. A. Birzhevoi ◽  
Yu. V. Alekseev ◽  
A. G. Vakhtin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Zirconium Hydride ◽  
Radiation Induced ◽  
Induced Defects ◽  
Thermal Stability Of

scholarly journals Люминесценция дефектов F-типа и их термическая стабильность в сапфире, облученном импульсными ионными пучками

2020 ◽  
Vol 128 (2) ◽  
pp. 211
Author(s):  
Д.В. Ананченко ◽  
С.В. Никифоров ◽  
Г.Р. Рамазанова ◽  
Р.И. Баталов ◽  
Р.М. Баязитов ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Optical Absorption ◽  
Single Crystals ◽  
Ion Beam ◽  
Pulsed Cathodoluminescence ◽  
Ion Beam Treatment ◽  
Radiation Induced ◽  
The Stability ◽  
Induced Defects ◽  
Thermal Stability Of

Luminescence and thermal stability of defects formed in alpha-Al2O3 single crystals under pulsed ion beam treatment (C+/H+ ions with an energy 300 keV, pulse duration 80 ns) were investigated. This type of irradiation leads to the intensive generation of both single F- and F+-centers and more complex defects (F2-type aggregate centers or vacancy-impurity complexes) in alpha-Al2O3. It was confirmed by the results of optical absorption, photoluminescence, and pulsed cathodoluminescence measurements. The thermal stability of F-type defects formed in alpha-Al2O3 under the pulsed ion beam treatment is comparable to the stability of radiation-induced defects in neutron-irradiated samples.

scholarly journals Erratum to: The thermal stability of radiation-induced defects in illite

2015 ◽  
Vol 43 (1) ◽  
pp. 31-31
Author(s):  
T. Riegler ◽  
T. Allard ◽  
D. Beaufort ◽  
J.-L. Cantin ◽  
H. J. von Bardeleben
Keyword(s):  
Thermal Stability ◽  
Radiation Induced ◽  
Induced Defects ◽  
Thermal Stability Of

The thermal stability of radiation-induced defects in illite

2015 ◽  
Vol 43 (1) ◽  
pp. 23-30 ◽  
Author(s):  
T. Riegler ◽  
T. Allard ◽  
D. Beaufort ◽  
J.-L. Cantin ◽  
H. J. von Bardeleben
Keyword(s):  
Thermal Stability ◽  
Radiation Induced ◽  
Induced Defects ◽  
Thermal Stability Of

Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 365-368 ◽  
Author(s):  
Giovanni Alfieri ◽  
Edouard V. Monakhov ◽  
Margareta K. Linnarsson ◽  
Bengt Gunnar Svensson
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
High Energy ◽  
Conduction Band Edge ◽  
Energy Band Gap ◽  
Annealing Step ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Thermal Stability Of

Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (Ec) have been detected.

Comparison of the electrical and thermal stability of stress- or radiation-induced leakage current in thin oxides

2000 ◽  
Vol 76 (9) ◽  
pp. 1158-1160 ◽  
Author(s):  
P. Riess ◽  
M. Ceschia ◽  
A. Paccagnella ◽  
G. Ghibaudo ◽  
G. Pananakakis
Keyword(s):  
Thermal Stability ◽  
Leakage Current ◽  
Radiation Induced ◽  
Thermal Stability Of

Thermal stability of radiation-induced optical absorption in quartz

1976 ◽  
Vol 19 (6) ◽  
pp. 780-782
Author(s):  
V. G. Zubov ◽  
N. G. Kirillova ◽  
N. D. Kundikova ◽  
L. P. Osipova
Keyword(s):  
Thermal Stability ◽  
Optical Absorption ◽  
Radiation Induced ◽  
Thermal Stability Of
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