Defect-enhanced solid-state amorphization in Zr100−xAlx/Ni thin-film diffusion couples

2000 ◽  
Vol 76 (14) ◽  
pp. 1825-1827 ◽  
Author(s):  
M. Gimbel ◽  
S. Schneider ◽  
E. Spiecker ◽  
M. Seibt
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Diffusion Couples ◽  
Film Diffusion ◽  
Thin Film Diffusion ◽  
State Amorphization

Interdiffusion and Stress Development in Thin Film Diffusion Couples

2006 ◽  
pp. 801-806
Author(s):  
Y. Kuru ◽  
J. Chakraborty ◽  
U. Welzel ◽  
M. Wohlschlögel ◽  
Eric J. Mittemeijer
Keyword(s):  
Thin Film ◽  
Diffusion Couples ◽  
Film Diffusion ◽  
Stress Development ◽  
Thin Film Diffusion

Calorimetric study of the energetics and kinetics of interdiffusion in Cu/Cu6Sn5 thin‐film diffusion couples

1995 ◽  
Vol 67 (19) ◽  
pp. 2795-2797 ◽  
Author(s):  
K. F. Dreyer ◽  
W. K. Neils ◽  
R. R. Chromik ◽  
D. Grosman ◽  
E. J. Cotts
Keyword(s):  
Thin Film ◽  
Calorimetric Study ◽  
Diffusion Couples ◽  
Film Diffusion ◽  
Thin Film Diffusion ◽  
Kinetics Of

Correlations Between Electrical Properties and Solid-State Reactions in Co/N-GaAs Contacts: A Bulk and Thin-Film Study

1989 ◽  
Vol 148 ◽  
Author(s):  
F.-Y. Shiau ◽  
Y. A. Chang
Keyword(s):  
Thin Film ◽  
Phase Diagram ◽  
Solid State ◽  
Electrical Properties ◽  
Phase Formation ◽  
Electrical Characterization ◽  
Solid State Reactions ◽  
Film Diffusion ◽  
Film Study ◽  
Thin Film Diffusion

ABSTRACTA fundamental and comprehensive approach has been taken to study Co//GaAs interfacial reactions, using phase diagram determination, bulk and thin-film diffusion couple studies, and electrical characterization. Phase formation sequences and interfacial morphologies are found to be similar in bulk and thin-film couples. Thermodynamic and kinetic analyses are used to rationalize the contact formations. The electrical properties of the contacts are correlated to the phase formation sequences and phase diagram information.

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