Correlations Between Electrical Properties and Solid-State Reactions in Co/N-GaAs Contacts: A Bulk and Thin-Film Study

1989 ◽  
Vol 148 ◽  
Author(s):  
F.-Y. Shiau ◽  
Y. A. Chang
Keyword(s):  
Thin Film ◽  
Phase Diagram ◽  
Solid State ◽  
Electrical Properties ◽  
Phase Formation ◽  
Electrical Characterization ◽  
Solid State Reactions ◽  
Film Diffusion ◽  
Film Study ◽  
Thin Film Diffusion

ABSTRACTA fundamental and comprehensive approach has been taken to study Co//GaAs interfacial reactions, using phase diagram determination, bulk and thin-film diffusion couple studies, and electrical characterization. Phase formation sequences and interfacial morphologies are found to be similar in bulk and thin-film couples. Thermodynamic and kinetic analyses are used to rationalize the contact formations. The electrical properties of the contacts are correlated to the phase formation sequences and phase diagram information.

Defect-enhanced solid-state amorphization in Zr100−xAlx/Ni thin-film diffusion couples

2000 ◽  
Vol 76 (14) ◽  
pp. 1825-1827 ◽  
Author(s):  
M. Gimbel ◽  
S. Schneider ◽  
E. Spiecker ◽  
M. Seibt
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Diffusion Couples ◽  
Film Diffusion ◽  
Thin Film Diffusion ◽  
State Amorphization

scholarly journals Phase formation sequence in the Ti/InP system during thin film solid-state reactions

2017 ◽  
Vol 121 (24) ◽  
pp. 245311 ◽  
Author(s):  
E. Ghegin ◽  
Ph. Rodriguez ◽  
J. L. Lábár ◽  
M. Menyhárd ◽  
S. Favier ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Phase Formation ◽  
Solid State Reactions

Controlled Modifications in the Electrical Properties of Metal/GaAs Junctions

1990 ◽  
Vol 181 ◽  
Author(s):  
M. Eizenberg
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Electrical Properties ◽  
Gaas Substrate ◽  
Surface Region ◽  
Solid State Reactions ◽  
Physical Processes ◽  
Compound Formation ◽  
Near Surface ◽  
Contact Metal

ABSTRACTControlled modifications in the electrical properties of metal/GaAs junctions were obtaind by a few different approaches. The first approach is based on modifications induced by solid state reactions occurring between the metal and GaAs substrate, resulting in compound formation and component redistribution. The characteristics of such contacts can further be modified when the contact metal is alloyed with another metal or with a dopant. The second approach is based on modifying the doping level of the near surface region of the GaAs. Here an enhancement of the barrier height was obtained by heavily counter doping the top GaAs region by recoil implantation of Mg from a Mg thin film irradiated by As− ions. The correlations between the electrical properties of the junctions and the physical processes taking place using the above mentioned approaches are discussed.

Thin film Ni-Si solid-state reactions: Phase formation sequence on amorphized Si

2013 ◽  
Vol 31 (5) ◽  
pp. 051213 ◽  
Author(s):  
Pierre Turcotte-Tremblay ◽  
Matthieu Guihard ◽  
Simon Gaudet ◽  
Martin Chicoine ◽  
Christian Lavoie ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Phase Formation ◽  
Solid State Reactions

Electric-Field Effects on Reactions Between Oxides

1997 ◽  
Vol 481 ◽  
Author(s):  
Matthew T. Johnson ◽  
Shelley R. Gilliss ◽  
C. Barry Carter
Keyword(s):  
Solid State ◽  
Electric Field ◽  
Elevated Temperatures ◽  
Ionic Current ◽  
Reaction Rates ◽  
Solid State Reactions ◽  
Interfacial Stability ◽  
Electric Field Effects ◽  
Thin Film Diffusion ◽  
Microscopy Techniques

ABSTRACTThin films of In2O3 and Fe2O3 have been deposited on (001) MgO using pulsed-laser deposition (PLD). These thin-film diffusion couples were then reacted in an applied electric field at elevated temperatures. In this type of solid-state reaction, both the reaction rate and the interfacial stability are affected by the transport properties of the reacting ions. The electric field provides a very large external driving force that influences the diffusion of the cations in the constitutive layers. This induced ionic current causes changes in the reaction rates, interfacial stability and distribution of the phases. Through the use of electron microscopy techniques the reaction kinetics and interface morphology have been investigated in these spinel-forming systems, to gain a better understanding of the influence of an electric field on solid-state reactions.

Interdiffusion and Stress Development in Thin Film Diffusion Couples

2006 ◽  
pp. 801-806
Author(s):  
Y. Kuru ◽  
J. Chakraborty ◽  
U. Welzel ◽  
M. Wohlschlögel ◽  
Eric J. Mittemeijer
Keyword(s):  
Thin Film ◽  
Diffusion Couples ◽  
Film Diffusion ◽  
Stress Development ◽  
Thin Film Diffusion
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