Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers

2000 ◽  
Vol 77 (10) ◽  
pp. 1419-1421 ◽  
Author(s):  
F. Klopf ◽  
J. P. Reithmaier ◽  
A. Forchel
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Active Layer ◽  
High Power ◽  
Quantum Well Lasers ◽  
Layer Versus ◽  
Quantum Dot Lasers ◽  
Highly Efficient ◽  
Gaas Quantum Dot

Catastrophic degradation in high-power InGaAs-AlGaAs strained quantum well lasers and InAs-GaAs quantum dot lasers

2013 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Brendan Foran ◽  
Neil Ives ◽  
Nathan Presser ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot ◽  
Strained Quantum Well

Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

2001 ◽  
Vol 78 (9) ◽  
pp. 1207-1209 ◽  
Author(s):  
R. L. Sellin ◽  
Ch. Ribbat ◽  
M. Grundmann ◽  
N. N. Ledentsov ◽  
D. Bimberg
Keyword(s):  
Quantum Dot ◽  
High Power ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot

scholarly journals Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance

2021 ◽  
Vol 8 ◽  
Author(s):  
Jia-Jian Chen ◽  
Zi-Hao Wang ◽  
Wen-Qi Wei ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Excited State ◽  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Well Lasers ◽  
Laser Source ◽  
Quantum Dot Lasers ◽  
Optical Isolator ◽  
Quantum Dot Laser ◽  
On Chip ◽  
Inas Quantum Dot

A feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate by operating in a sole excited state. The experimental results show that the sole excited-state lasing InAs quantum dot lasers on Si are less sensitive to external optical feedback than both Fabry-Perot and distributed-feedback quantum-well lasers. By comparing the laser behavior under different feedback levels, sole excited-state InAs quantum dot lasers on Si exhibit at least a 28 dB stronger feedback tolerance than quantum-well lasers. This result proposes a possible route for a high feedback insensitive laser as an on-chip light source towards Si waveguide integration with the absence of an optical isolator.

scholarly journals High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

2010 ◽  
Vol 103 (3) ◽  
pp. 609-613 ◽  
Author(s):  
D. I. Nikitichev ◽  
Y. Ding ◽  
M. Ruiz ◽  
M. Calligaro ◽  
N. Michel ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Power ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot

In As/GaAs quantum dot lasers with dots in an asymmetric quantum well structure

2006 ◽  
Vol 376-377 ◽  
pp. 886-889 ◽  
Author(s):  
W.J. Choi ◽  
J.D. Song ◽  
J.I. Lee ◽  
K.C. Kim ◽  
T.G. Kim
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Dot Lasers ◽  
Quantum Well Structure ◽  
Asymmetric Quantum ◽  
Gaas Quantum Dot

High power 1100-nm InGaAs/GaAs quantum dot lasers

2010 ◽  
Author(s):  
E Pavelescu ◽  
C Gilfert ◽  
M Danila ◽  
A Dinescu ◽  
J Reithmaier
Keyword(s):  
Quantum Dot ◽  
High Power ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot

Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy

2014 ◽  
Vol 1635 ◽  
pp. 43-48 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
William Lotshaw ◽  
Steven C. Moss
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
High Power ◽  
Molecular Beam ◽  
Carrier Dynamics ◽  
Quantum Dot Lasers ◽  
Broad Area ◽  
Time Resolved ◽  
Quantum Dot Laser ◽  
Gaas Quantum Dot

ABSTRACTWe investigated carrier dynamics in both proton-irradiated InAs-GaAs quantum dot laser structures and in high power broad-area InAs-GaAs quantum dot lasers with windowed n-contacts using time-resolved PL (TR-PL) techniques.

1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applications

2011 ◽  
Vol 44 (14) ◽  
pp. 145104 ◽  
Author(s):  
E-M Pavelescu ◽  
C Gilfert ◽  
P Weinmann ◽  
M Dănilă ◽  
A Dinescu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Power ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot
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