Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers

A feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate by operating in a sole excited state. The experimental results show that the sole excited-state lasing InAs quantum dot lasers on Si are less sensitive to external optical feedback than both Fabry-Perot and distributed-feedback quantum-well lasers. By comparing the laser behavior under different feedback levels, sole excited-state InAs quantum dot lasers on Si exhibit at least a 28 dB stronger feedback tolerance than quantum-well lasers. This result proposes a possible route for a high feedback insensitive laser as an on-chip light source towards Si waveguide integration with the absence of an optical isolator.

Download Full-text

High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

Applied Physics B ◽

10.1007/s00340-010-4290-5 ◽

2010 ◽

Vol 103 (3) ◽

pp. 609-613 ◽

Cited By ~ 15

Author(s):

D. I. Nikitichev ◽

Y. Ding ◽

M. Ruiz ◽

M. Calligaro ◽

N. Michel ◽

...

Keyword(s):

Quantum Dot ◽

High Power ◽

Quantum Dot Lasers ◽

Gaas Quantum Dot

Download Full-text

In As/GaAs quantum dot lasers with dots in an asymmetric quantum well structure

Physica B Condensed Matter ◽

10.1016/j.physb.2005.12.221 ◽

2006 ◽

Vol 376-377 ◽

pp. 886-889 ◽

Cited By ~ 9

Author(s):

W.J. Choi ◽

J.D. Song ◽

J.I. Lee ◽

K.C. Kim ◽

T.G. Kim

Keyword(s):

Quantum Dot ◽

Quantum Well ◽

Quantum Dot Lasers ◽

Quantum Well Structure ◽

Asymmetric Quantum ◽

Gaas Quantum Dot

Download Full-text

High power 1100-nm InGaAs/GaAs quantum dot lasers

CAS 2010 Proceedings (International Semiconductor Conference) ◽

10.1109/smicnd.2010.5649056 ◽

2010 ◽

Author(s):

E Pavelescu ◽

C Gilfert ◽

M Danila ◽

A Dinescu ◽

J Reithmaier

Keyword(s):

Quantum Dot ◽

High Power ◽

Quantum Dot Lasers ◽

Gaas Quantum Dot

Download Full-text

Comparative analysis of cavity length-dependent temperature sensitivity of GaInNAs quantum dot lasers and quantum well lasers

Nanotechnology ◽

10.1088/0957-4484/17/22/016 ◽

2006 ◽

Vol 17 (22) ◽

pp. 5627-5631 ◽

Cited By ~ 7

Author(s):

C Y Liu ◽

S F Yoon ◽

Q Cao ◽

C Z Tong ◽

Z Z Sun

Keyword(s):

Comparative Analysis ◽

Quantum Dot ◽

Quantum Well ◽

Temperature Sensitivity ◽

Cavity Length ◽

Quantum Well Lasers ◽

Quantum Dot Lasers

Download Full-text

High-power GaInAs/(Al)GaAs quantum dot lasers with optimized waveguide design for high brightness applications

IEEE 18th International Semiconductor Laser Conference ◽

10.1109/islc.2002.1041159 ◽

2003 ◽

Author(s):

S. Deubert ◽

F. Klopf ◽

J.P. Reithmaier ◽

A. Forchel

Keyword(s):

Quantum Dot ◽

High Power ◽

Quantum Dot Lasers ◽

High Brightness ◽

Waveguide Design ◽

Gaas Quantum Dot

Download Full-text

Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/opl.2014.103 ◽

2014 ◽

Vol 1635 ◽

pp. 43-48 ◽

Cited By ~ 1

Author(s):

Yongkun Sin ◽

Stephen LaLumondiere ◽

William Lotshaw ◽

Steven C. Moss

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Dot ◽

High Power ◽

Molecular Beam ◽

Carrier Dynamics ◽

Quantum Dot Lasers ◽

Broad Area ◽

Time Resolved ◽

Quantum Dot Laser ◽

Gaas Quantum Dot

ABSTRACTWe investigated carrier dynamics in both proton-irradiated InAs-GaAs quantum dot laser structures and in high power broad-area InAs-GaAs quantum dot lasers with windowed n-contacts using time-resolved PL (TR-PL) techniques.

Download Full-text