Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy

2014 ◽  
Vol 1635 ◽  
pp. 43-48 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
William Lotshaw ◽  
Steven C. Moss

ABSTRACTWe investigated carrier dynamics in both proton-irradiated InAs-GaAs quantum dot laser structures and in high power broad-area InAs-GaAs quantum dot lasers with windowed n-contacts using time-resolved PL (TR-PL) techniques.

2016 ◽  
Vol 213 (4) ◽  
pp. 958-964 ◽  
Author(s):  
Takeo Kageyama ◽  
Katsuyuki Watanabe ◽  
Quoc Huy Vo ◽  
Keizo Takemasa ◽  
Mitsuru Sugawara ◽  
...  

2001 ◽  
Vol 227-228 ◽  
pp. 1155-1161 ◽  
Author(s):  
V.M Ustinov ◽  
A.E Zhukov ◽  
N.A Maleev ◽  
A.R Kovsh ◽  
S.S Mikhrin ◽  
...  

2010 ◽  
Vol 312 (23) ◽  
pp. 3451-3454 ◽  
Author(s):  
H.D. Yang ◽  
Q. Gong ◽  
S.G. Li ◽  
C.F. Cao ◽  
C.F. Xu ◽  
...  

2002 ◽  
Vol 80 (4) ◽  
pp. 535-537 ◽  
Author(s):  
Nien-Tze Yeh ◽  
Wei-Sheng Liu ◽  
Shu-Han Chen ◽  
Pe-Chin Chiu ◽  
Jen-Inn Chyi

2016 ◽  
Vol 48 (2) ◽  
Author(s):  
S. G. Li ◽  
Q. Gong ◽  
X. Z. Wang ◽  
C. F. Cao ◽  
Z. W. Zhou ◽  
...  

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