Electro-optic effect of periodically poled optical superlattice LiNbO3 and its applications

2000 ◽  
Vol 77 (23) ◽  
pp. 3719-3721 ◽  
Author(s):  
Yan-Qing Lu ◽  
Zhi-Liang Wan ◽  
Quan Wang ◽  
Yuan-Xin Xi ◽  
Nai-Ben Ming
Photonics ◽  
2021 ◽  
Vol 8 (7) ◽  
pp. 242
Author(s):  
An-Chung Chiang ◽  
Yuan-Yao Lin ◽  
Shou-Tai Lin ◽  
Yen-Yin Lin

Electro-optic (EO) Bragg deflectors have been extensively used in a variety of applications. Recent developments show that bandwidths and deflection efficiencies, as well as angular bandwidths, would significantly limit the utilization of EO Bragg deflectors, especially for applications which need strong focusing, such as intra-cavity applications. In this paper, we introduce a broadband EO Bragg deflector based on periodically-poled lithium niobate with a monolithic dual-grating design. We analyzed the deflection properties of this device by using a modified coupled wave theory and showed that this device can be still efficient for a small beam radius under strong focusing, whereas a single-grating one becomes very inefficient. Using a 1064-nm laser beam with a 100-μm beam radius, we obtained a 74% deflection efficiency with a 190-V bias voltage with a 0.5-mm-thick and 7.5-mm-long dual-grating sample. The acceptance angle for the Bragg condition of this device is as large as a few tens of mrad. The potential bandwidth of this device exceeds 500 nm if the proper operation region is chosen.


2002 ◽  
Vol 743 ◽  
Author(s):  
W. Alan Doolittle ◽  
Gon Namkoong ◽  
Alexander Carver ◽  
Walter Henderson ◽  
Dieter Jundt ◽  
...  

ABSTRACTHerein, we discuss the use of a novel new substrate for III-Nitride epitaxy, Lithium Niobate. It is shown that Lithium Niobate (LN) has a smaller lattice mismatch to III-Nitrides than sapphire and can be used to control the polarity of III-Nitride films grown by plasma assisted molecular beam epitaxy. Results from initial growth studies are reported including using various nitridation/buffer conditions along with structural and optical characterization. Comparisons of data obtained from GaN and AlN buffer layers are offered and details of the film adhesion dependence on buffer layer conditions is presented. Lateral polarization heterostructures grown on periodically poled LN are also demonstrated. While work is still required to establish the limits of the methods proposed herein, these initial studies offer the promise for mixing III-Nitride semiconductor materials with lithium niobate allowing wide bandgap semiconductors to utilize the acoustic, pyroelectric/ferroelectric, electro-optic, and nonlinear optical properties of this new substrate material as well as the ability to engineer various polarization structures for future devices.


2002 ◽  
Vol 19 (2) ◽  
pp. 280 ◽  
Author(s):  
Heiko Ridderbusch ◽  
Marvin E. Klein ◽  
Petra Gross ◽  
Dong-Hoon Lee ◽  
Jan-Peter Meyn ◽  
...  

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