Electron field emission from carbon nanoparticles prepared by microwave-plasma chemical-vapor deposition

2001 ◽  
Vol 78 (15) ◽  
pp. 2226-2228 ◽  
Author(s):  
J. Yu ◽  
E. G. Wang ◽  
X. D. Bai
Keyword(s):  
Chemical Vapor Deposition ◽  
Field Emission ◽  
Vapor Deposition ◽  
Carbon Nanoparticles ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Electron Field Emission ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Electron Field

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

2005 ◽  
Vol 480-481 ◽  
pp. 65-70 ◽  
Author(s):  
Wen Juan Cheng ◽  
Jin Chun Jiang ◽  
Yang Zhang ◽  
De Zhong Shen ◽  
He Sun Zhu
Keyword(s):  
Chemical Vapor Deposition ◽  
Field Emission ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Carbon

Silicon carbon nitride (SiCN) films have been deposited on silicon wafers by microwave plasma chemical vapor deposition (MPCVD). Gas mixture of H2, CH4, N2, and SiH4 was used as precursors, in which the flow rate of N2 was changed. X-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy were employed to characterize the composition and bonding structures, while field-emission scanning electron microscopy were used to investigate the microstructure of the films. With increasing the flow rate of N2 from 50 sccm to 300 sccm, the SiCN films changed from amorphous to nanocrystalline. Characteristic current-voltage measurements indicate a low turn-on field of 10.8 V/µm. Field emission current density of 4.5 mA/cm2 has been observed at 20 V/µm.

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