AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

High Electron ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

10.1116/1.1481751 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1200 ◽

Cited By ~ 7

Author(s):

O. Baklenov ◽

D. Lubyshev ◽

Y. Wu ◽

X.-M. Fang ◽

J. M. Fastenau ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Large Diameter ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

High Electron ◽

GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/29/4/045011 ◽

2014 ◽

Vol 29 (4) ◽

pp. 045011 ◽

Cited By ~ 31

Author(s):

Stephen W Kaun ◽

Elaheh Ahmadi ◽

Baishakhi Mazumder ◽

Feng Wu ◽

Erin C H Kyle ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Homogeneous Lattice ◽

Lattice Matched

Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1379785 ◽

2001 ◽

Vol 78 (24) ◽

pp. 3845-3847 ◽

Cited By ~ 21

Author(s):

James B. Webb ◽

H. Tang ◽

J. A. Bardwell ◽

P. Coleridge

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Mobility ◽

High Electron ◽

InGaP/InGaAs/GaAs High Electron Mobility Transistor Structure Grown by Solid Source Molecular Beam Epitaxy Using GaP as Phosphorous Source

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.l647 ◽

1997 ◽

Vol 36 (Part 2, No. 6A) ◽

pp. L647-L649 ◽

Cited By ~ 17

Author(s):

Mohamed Missous ◽

Azlan Abdul Aziz ◽

Adarsh Sandhu

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

Transistor Structure ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Nondestructive test methodology for molecular beam epitaxy grown pseudomorphic high electron mobility transistor materials

10.1116/1.588909 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2240

Author(s):

Y. C. Pao

Keyword(s):

Molecular Beam Epitaxy ◽

Nondestructive Test ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Test Methodology

Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

Journal of Applied Physics ◽

10.1063/1.4923035 ◽

2015 ◽

Vol 117 (24) ◽

pp. 245305 ◽

Cited By ~ 3

Author(s):

L. Ravikiran ◽

K. Radhakrishnan ◽

S. Munawar Basha ◽

N. Dharmarasu ◽

M. Agrawal ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Leakage Current ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In[sub 0.7]Ga[sub 0.3]As/In[sub 0.52]Al[sub 0.48]As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecular-beam epitaxy

10.1116/1.1387454 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1515 ◽

Cited By ~ 9

Author(s):

I. Watanabe ◽

K. Kanzaki ◽

T. Aoki ◽

T. Kitada ◽

S. Shimomura ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Electron Mobility ◽

Molecular Beam ◽

Impurity Scattering ◽

High Electron ◽

Transistor Structure ◽

Molecular beam epitaxy growth of indium-rich structures towards high channel conductivity for a high electron mobility transistor using a linearly graded buffer layer

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00412-5 ◽

1996 ◽

Vol 169 (3) ◽

pp. 435-442 ◽

Cited By ~ 4

Author(s):

Sang-Ki Hong ◽

Hae-Gwon Lee ◽

Jae-Jin Lee ◽

Sang-Gi Kim ◽

Kwang-Eui Pyun ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Buffer Layer ◽

Electron Mobility ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Channel Conductivity

Molecular beam epitaxy growth of In0.52Al0.48As∕In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

Applied Physics Letters ◽

10.1063/1.2189607 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132108 ◽

Cited By ~ 7

Author(s):

Soo-Ghang Ihn ◽

Seong June Jo ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Rapid Thermal Annealing ◽

Electron Mobility ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Growth Interruption

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

In1−xAlxP/InAlAs/InGaAs and InAlAs/InAs0.3P0.7 high-electron mobility transistor structures grown by solid source molecular beam epitaxy

10.1116/1.588907 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2233 ◽

Cited By ~ 7

Author(s):

W. E. Hoke

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽