Molecular beam epitaxy growth of In0.52Al0.48As∕In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

High Electron ◽

High Electron Mobility ◽

Growth Interruption

Molecular beam epitaxy growth of indium-rich structures towards high channel conductivity for a high electron mobility transistor using a linearly graded buffer layer

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00412-5 ◽

1996 ◽

Vol 169 (3) ◽

pp. 435-442 ◽

Cited By ~ 4

Author(s):

Sang-Ki Hong ◽

Hae-Gwon Lee ◽

Jae-Jin Lee ◽

Sang-Gi Kim ◽

Kwang-Eui Pyun ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Buffer Layer ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Channel Conductivity

Molecular beam epitaxy growth of InP-based lattice-matched high electron mobility transistor structures having a modified quantum-well profile due to AlxGayIn1 − x − yAs(x + y = 0.47−8) buffer layer

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00897-4 ◽

1997 ◽

Vol 177 (1-2) ◽

pp. 28-32

Author(s):

H.G. Lee ◽

S.K. Hong ◽

S.G. Kim ◽

K.S. Lee ◽

H.M. Kim ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Buffer Layer ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Lattice Matched

Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Cited By ~ 7

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

Electron Mobility Transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

10.1116/1.1481751 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1200 ◽

Cited By ~ 7

Author(s):

O. Baklenov ◽

D. Lubyshev ◽

Y. Wu ◽

X.-M. Fang ◽

J. M. Fastenau ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Large Diameter ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

High Electron ◽

GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/29/4/045011 ◽

2014 ◽

Vol 29 (4) ◽

pp. 045011 ◽

Cited By ~ 31

Author(s):

Stephen W Kaun ◽

Elaheh Ahmadi ◽

Baishakhi Mazumder ◽

Feng Wu ◽

Erin C H Kyle ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Homogeneous Lattice ◽

Lattice Matched

Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1379785 ◽

2001 ◽

Vol 78 (24) ◽

pp. 3845-3847 ◽

Cited By ~ 21

Author(s):

James B. Webb ◽

H. Tang ◽

J. A. Bardwell ◽

P. Coleridge

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Mobility ◽

High Electron ◽

InGaP/InGaAs/GaAs High Electron Mobility Transistor Structure Grown by Solid Source Molecular Beam Epitaxy Using GaP as Phosphorous Source

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.l647 ◽

1997 ◽

Vol 36 (Part 2, No. 6A) ◽

pp. L647-L649 ◽

Cited By ~ 17

Author(s):

Mohamed Missous ◽

Azlan Abdul Aziz ◽

Adarsh Sandhu

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

Transistor Structure ◽

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab06b4 ◽

2019 ◽

Vol 58 (SC) ◽

pp. SC1010 ◽

Cited By ~ 1

Author(s):

Ahmed Alyamani ◽

Evgenii V. Lutsenko ◽

Mikalai V. Rzheutski ◽

Vitaly Z. Zubialevich ◽

Aliaksei G. Vainilovich ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Nondestructive test methodology for molecular beam epitaxy grown pseudomorphic high electron mobility transistor materials

10.1116/1.588909 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2240

Author(s):

Y. C. Pao

Keyword(s):

Molecular Beam Epitaxy ◽

Nondestructive Test ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Test Methodology

Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

Journal of Applied Physics ◽

10.1063/1.4923035 ◽

2015 ◽

Vol 117 (24) ◽

pp. 245305 ◽

Cited By ~ 3

Author(s):

L. Ravikiran ◽

K. Radhakrishnan ◽

S. Munawar Basha ◽

N. Dharmarasu ◽

M. Agrawal ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Leakage Current ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽