Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

2015 ◽  
Vol 117 (24) ◽  
pp. 245305 ◽  
Author(s):  
L. Ravikiran ◽  
K. Radhakrishnan ◽  
S. Munawar Basha ◽  
N. Dharmarasu ◽  
M. Agrawal ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Leakage Current ◽  
Electron Mobility ◽  
Molecular Beam ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1010 ◽  
Author(s):  
Ahmed Alyamani ◽  
Evgenii V. Lutsenko ◽  
Mikalai V. Rzheutski ◽  
Vitaly Z. Zubialevich ◽  
Aliaksei G. Vainilovich ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility
Sign in / Sign up

Export Citation Format

Share Document