Concentration dependence of the density of states in the Pauli paramagnets YNi5−xCux

2001 ◽  
Vol 27 (8) ◽  
pp. 662-665 ◽  
Author(s):  
A. M. Gurevich ◽  
V. N. Eropkin ◽  
N. N. Prentslau ◽  
A. V. Terekhov ◽  
V. M. Dmitriev ◽  
...  
2012 ◽  
Vol 391 ◽  
pp. 012127 ◽  
Author(s):  
Tetsuya Iye ◽  
Yusuke Nakai ◽  
Shunsaku Kitagawa ◽  
Kenji Ishida ◽  
Hiroaki Ikeda ◽  
...  

1977 ◽  
Vol 55 (14) ◽  
pp. 1218-1220 ◽  
Author(s):  
J.C. H. Chiu ◽  
R. A. B. Devine

It is shown that electrical resistivity measurement may be used to determine the concentration dependence of the density of states in Pd–Ag alloys. The Debye temperatures for the alloys are also determined and there is some difference found between these results and those from other measurements.


1990 ◽  
Vol 04 (01) ◽  
pp. 37-41
Author(s):  
A. FERREIRA da SILVA

The effective mass of phosphorus-doped silicon has been calculated in the light of the Gutzwiller method for highly correlated system. The many-valley nature of the host conduction band minima with a variational impurity concentration dependence is taken into account in the calculation. The results show fair agreement when compared to previous work and available experimental data. Calculation of the density of states at the Fermi energy is also presented for the sake of comparison.


1996 ◽  
Vol 93 ◽  
pp. 819-827 ◽  
Author(s):  
C Michon ◽  
G Cuvelier ◽  
B Launay ◽  
A Parker

1976 ◽  
Vol 37 (C4) ◽  
pp. C4-241-C4-248 ◽  
Author(s):  
S. VON MOLNAR ◽  
T. PENNEY ◽  
F. HOLTZBERG
Keyword(s):  

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-59-C4-62
Author(s):  
H. Leschke ◽  
B. Kramer
Keyword(s):  
Band Gap ◽  

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-273-C8-274 ◽  
Author(s):  
N. Pillmayr ◽  
G. Hilscher ◽  
E. Gratz ◽  
V. Sechovsky

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