Impurity concentration dependence of the density of states in semiconductors

1971 ◽  
Vol 14 (3) ◽  
pp. 199-206 ◽  
Author(s):  
D.Dale Kleppinger ◽  
F.A. Lindholm
Keyword(s):  
Concentration Dependence ◽  
Density Of States ◽  
Impurity Concentration

ENHANCED EFFECTIVE MASS IN N-DOPED DEGENERATE SILICON

1990 ◽  
Vol 04 (01) ◽  
pp. 37-41
Author(s):  
A. FERREIRA da SILVA
Keyword(s):  
Experimental Data ◽  
Effective Mass ◽  
Concentration Dependence ◽  
Density Of States ◽  
Fermi Energy ◽  
Impurity Concentration ◽  
Doped Silicon ◽  
Highly Correlated ◽  
The Many ◽  
Phosphorus Doped

The effective mass of phosphorus-doped silicon has been calculated in the light of the Gutzwiller method for highly correlated system. The many-valley nature of the host conduction band minima with a variational impurity concentration dependence is taken into account in the calculation. The results show fair agreement when compared to previous work and available experimental data. Calculation of the density of states at the Fermi energy is also presented for the sake of comparison.

THE HOT CARRIER TEMPERATURE IN THE ANALYSIS OF THE FREE TO ACCEPTOR PHOTOLUMINESCENCE TRANSITION

2001 ◽  
Vol 15 (17n19) ◽  
pp. 696-699 ◽  
Author(s):  
G. Fonthal ◽  
M. de los Rios ◽  
J. Quintero ◽  
N. Piraquive ◽  
H. Ariza-Calderón
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Density Of States ◽  
Impurity Concentration ◽  
Lattice Temperature ◽  
Band Tail ◽  
Hot Carrier ◽  
Additional Information ◽  
Carrier Temperature ◽  
Shape Equation

We analyzed the free to acceptor (e-A) photoluminescence transition on a GaAs:Ge sample using the hot carrier temperature and the Kane's DOS. This latter temperature was calculated by the spectra largest energy tail. While the lattice temperature was put in the e-A Eagles' shape equation, the fitting was poor but if the modified line was put into the equation, the fitting was better. So, the ionization impurity energy, the band gap, the Fermi level and the band tail can be measured with a better precision than the measurements traditionally made with this method, Additional information about phonons participant can be obtained. In conclusion, the hot carrier temperature and the density of states due to the impurity concentration should be used in the e-A transition photoluminescence analysis.

Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)

2006 ◽  
Vol 527-529 ◽  
pp. 799-802
Author(s):  
Masataka Satoh ◽  
Tomoyuki Suzuki
Keyword(s):  
Ion Implantation ◽  
Concentration Dependence ◽  
Impurity Concentration ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Amorphous Layer ◽  
Phosphorus Concentration ◽  
Recrystallization Process ◽  
Substitutional Impurity ◽  
P Concentration

The impurity concentration dependence of the recrystallization rate of phosphorus implanted 4H-SiC(11-20) has been investigated by means of Rutherford backscattering spectrometry in the annealing temperature range from 660 to 720 oC . The phosphorus ions were multiply implanted to form the implantation layer with the thickness of 200 nm and the phosphorus concentration of 1 x 1020, 4 x 1020, or 1 x 1021 /cm3, respectively. The recrystallization rate of the P ion implantation-induced amorphous layer in 4H-SiC(11-20) increases with an activation energy of 3.4 eV as does the case of the Ar ion implantation-induced amorphous layer in 6H-SiC(11-20) and (1-100). As the P concentration is increased from 1 x 1020 to 1 x 1021 /cm3, the recrystallization rate is enhanced from 3.5 to about 5nm/min, while the recrystallization rate for the Ar implantationinduced amorphous layer was 1.5 nm/min. It is suggested that the recrystallization process is enhanced by the presence of the substitutional impurity at the amorphous-crystalline interface during the recrystallization.

Concentration dependence of the density of states in the Pauli paramagnets YNi5−xCux

2001 ◽  
Vol 27 (8) ◽  
pp. 662-665 ◽  
Author(s):  
A. M. Gurevich ◽  
V. N. Eropkin ◽  
N. N. Prentslau ◽  
A. V. Terekhov ◽  
V. M. Dmitriev ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Density Of States

Study on the Effect of Doping on Lattice Constant and Electronic Structure of Bulk AuCu by the Density Functional Theory

2019 ◽  
Vol 11 (02) ◽  
pp. 2030001 ◽  
Author(s):  
Dung Nguyen-Trong ◽  
Cuong Nguyen-Chinh ◽  
Van Duong-Quoc
Keyword(s):  
Density Functional Theory ◽  
Electronic Structure ◽  
Electronic Properties ◽  
Lattice Constant ◽  
Density Of States ◽  
Impurity Concentration ◽  
Density Functional ◽  
Unit Cell ◽  
Functional Theory ◽  
The Density Functional Theory

This paper studies the effect of GGA-PBE, GGA-PBEsol, GGA-PW91, GGA-VWN-BP, LDA-PWC, LDA-VWN parameterized exchange–correlation functionals and Cu impurity concentration on the lattice and electronic properties of bulk AuCu by the Density Functional Theory (DFT). The lattice properties are determined by the lattice constant, the unit cell volume and the total energy on unit cell. The electronic properties are determined by the band gap, the Partial Density of States (PDOS) and the total Density of States (DOS) of materials. The obtained results showed the effect of the interaction potential and the Cu impurity concentration on the lattice structure and the electronic structure of bulk AuCu.

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