ENHANCED EFFECTIVE MASS IN N-DOPED DEGENERATE SILICON

1990 ◽  
Vol 04 (01) ◽  
pp. 37-41
Author(s):  
A. FERREIRA da SILVA
Keyword(s):  
Experimental Data ◽  
Effective Mass ◽  
Concentration Dependence ◽  
Density Of States ◽  
Fermi Energy ◽  
Impurity Concentration ◽  
Doped Silicon ◽  
Highly Correlated ◽  
The Many ◽  
Phosphorus Doped

The effective mass of phosphorus-doped silicon has been calculated in the light of the Gutzwiller method for highly correlated system. The many-valley nature of the host conduction band minima with a variational impurity concentration dependence is taken into account in the calculation. The results show fair agreement when compared to previous work and available experimental data. Calculation of the density of states at the Fermi energy is also presented for the sake of comparison.

Impurity Concentration Dependence of Optical Absorption for Phosphorus-Doped Anatase TiO2

2011 ◽  
Vol 115 (16) ◽  
pp. 8184-8188 ◽  
Author(s):  
Yanhua Peng ◽  
Jingfu He ◽  
Qinghua Liu ◽  
Zhihu Sun ◽  
Wensheng Yan ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Concentration Dependence ◽  
Impurity Concentration ◽  
Anatase Tio2 ◽  
Phosphorus Doped

Electron–Hole Droplets in Semiconducting and Metallic Silicon

1974 ◽  
Vol 52 (14) ◽  
pp. 1336-1344 ◽  
Author(s):  
R. E. Halliwell ◽  
R. R. Parsons
Keyword(s):  
Low Temperature ◽  
Condensed Phase ◽  
Impurity Concentration ◽  
Entire Range ◽  
Photoluminescence Spectrum ◽  
Electron Hole ◽  
Doped Silicon ◽  
Phosphorus Doped

The photoluminescence spectrum of phosphorus-doped silicon has been studied as a function of impurity concentration 9.0 × 1015 cm−3 ≤ ND ≤ 4.3 × 1019 cm−3 and temperature 1.9 K ≤ T ≤ 145 K. The spectra at low temperature [Formula: see text] are interpreted in terms of a condensed phase of carriers (electron–hole droplet) over the entire range of concentrations studied.

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

New Process Integration of Sequential Phosphorus-Doped Silicon for Trench Field Plate Power MOSFETs

2021 ◽  
pp. 1-1
Author(s):  
Kota Tomita ◽  
Tatsuya Shiraishi ◽  
Hiroaki Kato ◽  
Hiroyuki Kishimoto ◽  
Katsura Miyashita ◽  
...  
Keyword(s):  
Process Integration ◽  
Power Mosfets ◽  
Field Plate ◽  
New Process ◽  
Doped Silicon ◽  
Phosphorus Doped

scholarly journals Reactivity in social scientific experiments: what is it and how is it different (and worse) than a Placebo effect?

2021 ◽  
Vol 11 (2) ◽  
Author(s):  
María Jiménez-Buedo
Keyword(s):  
Experimental Data ◽  
Conceptual Framework ◽  
Placebo Effect ◽  
Placebo Effects ◽  
Causal Inferences ◽  
Scientific Experiments ◽  
Social Scientific ◽  
The Many ◽  
Definition Of ◽  
In Virtue Of

AbstractReactivity, or the phenomenon by which subjects tend to modify their behavior in virtue of their being studied upon, is often cited as one of the most important difficulties involved in social scientific experiments, and yet, there is to date a persistent conceptual muddle when dealing with the many dimensions of reactivity. This paper offers a conceptual framework for reactivity that draws on an interventionist approach to causality. The framework allows us to offer an unambiguous definition of reactivity and distinguishes it from placebo effects. Further, it allows us to distinguish between benign and malignant forms of the phenomenon, depending on whether reactivity constitutes a danger to the validity of the causal inferences drawn from experimental data.

Nano-scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation

2021 ◽  
pp. 1-1
Author(s):  
Hung-Yuan Chang ◽  
Yew-Chung Sermon Wu ◽  
Chia-He Chang ◽  
Kun-Lin Lin ◽  
Abhijeet Joshi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Shallow Junction ◽  
Depth Profiles ◽  
Nano Scale ◽  
Doped Silicon ◽  
Phosphorus Doped

scholarly journals THE METHOD OF INCREMENTS — A WAVEFUNCTION-BASED AB-INITIO CORRELATION METHOD FOR SOLIDS

2007 ◽  
Vol 21 (13n14) ◽  
pp. 2204-2214 ◽  
Author(s):  
BEATE PAULUS
Keyword(s):  
Experimental Data ◽  
Ab Initio ◽  
Ground State ◽  
Infinite System ◽  
Correlation Energy ◽  
Correlation Method ◽  
Many Body ◽  
Hartree Fock ◽  
The Many ◽  
Good Agreement

The method of increments is a wavefunction-based ab initio correlation method for solids, which explicitly calculates the many-body wavefunction of the system. After a Hartree-Fock treatment of the infinite system the correlation energy of the solid is expanded in terms of localised orbitals or of a group of localised orbitals. The method of increments has been applied to a great variety of materials with a band gap, but in this paper the extension to metals is described. The application to solid mercury is presented, where we achieve very good agreement of the calculated ground-state properties with the experimental data.

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