scholarly journals P-concentration dependence of the quasiparticle density of states in BaFe2(As1-xPx)2

2012 ◽  
Vol 391 ◽  
pp. 012127 ◽  
Author(s):  
Tetsuya Iye ◽  
Yusuke Nakai ◽  
Shunsaku Kitagawa ◽  
Kenji Ishida ◽  
Hiroaki Ikeda ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Density Of States ◽  
P Concentration ◽  
Quasiparticle Density

scholarly journals Constraints on the quasiparticle density of states in high- T c superconductors

2000 ◽  
Vol 52 (2) ◽  
pp. 203-209 ◽  
Author(s):  
T Cren ◽  
D Roditchev ◽  
W Sacks ◽  
J Klein
Keyword(s):  
Density Of States ◽  
Quasiparticle Density

Vortex Lattice and Quasiparticle Density of States in CeRu2Studied by Scanning Tunneling Spectroscopy

2000 ◽  
Vol 69 (7) ◽  
pp. 1970-1973 ◽  
Author(s):  
Hideaki Sakata ◽  
Nobuhiko Nishida ◽  
Masato Hedo ◽  
Kenji Sakurai ◽  
Yoshihiko Inada ◽  
...  
Keyword(s):  
Density Of States ◽  
Vortex Lattice ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Quasiparticle Density

Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)

2006 ◽  
Vol 527-529 ◽  
pp. 799-802
Author(s):  
Masataka Satoh ◽  
Tomoyuki Suzuki
Keyword(s):  
Ion Implantation ◽  
Concentration Dependence ◽  
Impurity Concentration ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Amorphous Layer ◽  
Phosphorus Concentration ◽  
Recrystallization Process ◽  
Substitutional Impurity ◽  
P Concentration

The impurity concentration dependence of the recrystallization rate of phosphorus implanted 4H-SiC(11-20) has been investigated by means of Rutherford backscattering spectrometry in the annealing temperature range from 660 to 720 oC . The phosphorus ions were multiply implanted to form the implantation layer with the thickness of 200 nm and the phosphorus concentration of 1 x 1020, 4 x 1020, or 1 x 1021 /cm3, respectively. The recrystallization rate of the P ion implantation-induced amorphous layer in 4H-SiC(11-20) increases with an activation energy of 3.4 eV as does the case of the Ar ion implantation-induced amorphous layer in 6H-SiC(11-20) and (1-100). As the P concentration is increased from 1 x 1020 to 1 x 1021 /cm3, the recrystallization rate is enhanced from 3.5 to about 5nm/min, while the recrystallization rate for the Ar implantationinduced amorphous layer was 1.5 nm/min. It is suggested that the recrystallization process is enhanced by the presence of the substitutional impurity at the amorphous-crystalline interface during the recrystallization.

Quasiparticle density of states in a half metal in the presence of odd-frequency Cooper pairs

2008 ◽  
Vol 205 (5) ◽  
pp. 1023-1025 ◽  
Author(s):  
Yasuhiro Asano ◽  
Takehito Yokoyama ◽  
Yukio Tanaka ◽  
Alexander A. Golubov
Keyword(s):  
Density Of States ◽  
Cooper Pairs ◽  
Half Metal ◽  
Quasiparticle Density

scholarly journals Studying the concentration dependence of the aggregation number of a micellar model system by SANS

Soft Matter ◽  
2015 ◽  
Vol 11 (21) ◽  
pp. 4208-4217 ◽  
Author(s):  
Matthias Amann ◽  
Lutz Willner ◽  
Jörg Stellbrink ◽  
Aurel Radulescu ◽  
Dieter Richter
Keyword(s):  
Aqueous Solution ◽  
Concentration Dependence ◽  
Aggregation Number ◽  
Model System ◽  
Polymer Micelles ◽  
P Concentration

Concentration dependence of the aggregation number of n-octacosanyl-PEO polymer micelles in aqueous solution determined by SANS experiments.

Quasiparticle density of states measurements in clean superconducting AlMn alloys

2010 ◽  
Vol 107 (9) ◽  
pp. 093903 ◽  
Author(s):  
G. C. O’Neil ◽  
D. R. Schmidt ◽  
N. A. Tomlin ◽  
J. N. Ullom
Keyword(s):  
Density Of States ◽  
Quasiparticle Density
Sign in / Sign up

Export Citation Format

Share Document