Quantifying electrical spin injection: Component-resolved electroluminescence from spin-polarized light-emitting diodes

2001 ◽  
Vol 79 (19) ◽  
pp. 3098-3100 ◽  
Author(s):  
B. T. Jonker ◽  
A. T. Hanbicki ◽  
Y. D. Park ◽  
G. Itskos ◽  
M. Furis ◽  
...  
2006 ◽  
Vol 18 (32) ◽  
pp. 7703-7708 ◽  
Author(s):  
Moon-Ho Ham ◽  
Sukho Yoon ◽  
Yongjo Park ◽  
Lifeng Bian ◽  
Manfred Ramsteiner ◽  
...  

MRS Bulletin ◽  
2003 ◽  
Vol 28 (10) ◽  
pp. 740-748 ◽  
Author(s):  
B.T. Jonker ◽  
S.C. Erwin ◽  
A. Petrou ◽  
A.G. Petukhov

AbstractSemiconductor heterostructures that utilize carrier spin as a new degree of freedom offer entirely new functionality and enhanced performance over conventional devices. We describe the essential requirements for implementing this technology, focusing on the materials and interface issues relevant to electrical spin injection into a semiconductor. These are discussed and illustrated in the context of several prototype semiconductor spintronic devices, including spin-polarized light-emitting diodes and resonant tunneling structures such as the resonant interband tunneling diode.


2006 ◽  
Vol 88 (9) ◽  
pp. 091106 ◽  
Author(s):  
B. Kaestner ◽  
J. Wunderlich ◽  
J. Sinova ◽  
T. Jungwirth

2003 ◽  
Vol 82 (13) ◽  
pp. 2160-2162 ◽  
Author(s):  
R. Fiederling ◽  
P. Grabs ◽  
W. Ossau ◽  
G. Schmidt ◽  
L. W. Molenkamp

2014 ◽  
Vol 16 (6) ◽  
pp. 065008 ◽  
Author(s):  
Tibor Fördös ◽  
Kamil Postava ◽  
Henri Jaffrès ◽  
Jaromír Pištora

2017 ◽  
Vol 114 (8) ◽  
pp. 1783-1788 ◽  
Author(s):  
Nozomi Nishizawa ◽  
Kazuhiro Nishibayashi ◽  
Hiro Munekata

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlOxspin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP whenJ> 100 A/cm2. There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.


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