Monolithic integration of near-infrared Ge photodetectors with Si complementary metal–oxide–semiconductor readout electronics

Applied Physics Letters ◽

10.1063/1.1477267 ◽

2002 ◽

Vol 80 (18) ◽

pp. 3268-3270 ◽

Author(s):

Gianlorenzo Masini ◽

Valentino Cencelli ◽

Lorenzo Colace ◽

Francesco De Notaristefani ◽

Gaetano Assanto

Keyword(s):

Metal Oxide ◽

Near Infrared ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Monolithic Integration ◽

Oxide Semiconductor ◽

Readout Electronics

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Nanoplasmonic distributed Bragg reflector resonators for monolithic integration on a complementary metal-oxide-semiconductor platform

Applied Physics Letters ◽

10.1063/1.4817547 ◽

2013 ◽

Vol 103 (5) ◽

pp. 051107 ◽

Author(s):

M. P. Nielsen ◽

A. Y. Elezzabi

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Monolithic Integration ◽

Bragg Reflector ◽

Oxide Semiconductor ◽

Distributed Bragg Reflector

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Near-infrared sensitivity enhancement of a back-illuminated complementary metal oxide semiconductor image sensor with a pyramid surface for diffraction structure

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268403 ◽

2017 ◽

Author(s):

I. Oshiyama ◽

S. Yokogawa ◽

H. Ikeda ◽

Y. Ebiko ◽

T. Hirano ◽

...

Keyword(s):

Metal Oxide ◽

Near Infrared ◽

Complementary Metal Oxide Semiconductor ◽

Sensitivity Enhancement ◽

Image Sensor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Diffraction Structure ◽

Back Illuminated

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Monolithic Integration of a Silicon Nanowire Field-Effect Transistors Array on a Complementary Metal-Oxide Semiconductor Chip for Biochemical Sensor Applications

Analytical Chemistry ◽

10.1021/acs.analchem.5b02604 ◽

2015 ◽

Vol 87 (19) ◽

pp. 9982-9990 ◽

Author(s):

Paolo Livi ◽

Moria Kwiat ◽

Amir Shadmani ◽

Alexander Pevzner ◽

Giulio Navarra ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Monolithic Integration ◽

Oxide Semiconductor ◽

Sensor Applications ◽

Semiconductor Chip

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Erratum: “Nanoplasmonic distributed Bragg reflector resonators for monolithic integration on a complementary metal-oxide-semiconductor platform” [Appl. Phys. Lett. 103, 051107 (2013)]

Applied Physics Letters ◽

10.1063/1.4936181 ◽

2015 ◽

Vol 107 (21) ◽

pp. 219901

Author(s):

M. P. Nielsen ◽

A. Y. Elezzabi

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Monolithic Integration ◽

Bragg Reflector ◽

Oxide Semiconductor ◽

Distributed Bragg Reflector

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Light-emitting device with monolithic integration on bulk silicon in standard complementary metal oxide semiconductor technology

Journal of Nanophotonics ◽

10.1117/1.jnp.7.073082 ◽

2013 ◽

Vol 7 (1) ◽

pp. 073082 ◽

Author(s):

Kaikai Xu ◽

Guannpyng Li

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Monolithic Integration ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Bulk Silicon ◽

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Near-infrared camera in polycrystalline germanium integrated on complementary-metal-oxide semiconductor electronics

Applied Physics Letters ◽

10.1063/1.2425018 ◽

2007 ◽

Vol 90 (1) ◽

pp. 011103 ◽

Author(s):

Lorenzo Colace ◽

Gianlorenzo Masini ◽

Stefano Cozza ◽

Gaetano Assanto ◽

Francesco DeNotaristefani ◽

...

Keyword(s):

Metal Oxide ◽

Near Infrared ◽

Infrared Camera ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Electronics

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Integration of near infrared and visible organic photodiodes on a complementary metal–oxide–semiconductor compatible backplane

Thin Solid Films ◽

10.1016/j.tsf.2015.08.034 ◽

2015 ◽

Vol 592 ◽

pp. 94-98 ◽

Author(s):

M. Jahnel ◽

M. Thomschke ◽

K. Fehse ◽

U. Vogel ◽

J.D. An ◽

...

Keyword(s):

Metal Oxide ◽

Near Infrared ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology

Optical Engineering ◽

10.1117/1.oe.52.4.044001 ◽

2013 ◽

Vol 52 (4) ◽

pp. 044001 ◽

Author(s):

Johan Venter ◽

Saurabh Sinha

Keyword(s):

Metal Oxide ◽

Silicon Germanium ◽

Infrared Detectors ◽

Near Infrared ◽

Dynamic Range ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Sensitivity Improvement

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Near-infrared fluorescence goggle system with complementary metal–oxide–semiconductor imaging sensor and see-through display

Journal of Biomedical Optics ◽

10.1117/1.jbo.18.10.101303 ◽

2013 ◽

Vol 18 (10) ◽

pp. 101303 ◽

Author(s):

Yang Liu ◽

Raphael Njuguna ◽

Thomas Matthews ◽

Walter J. Akers ◽

Gail P. Sudlow ◽

...

Keyword(s):

Metal Oxide ◽

Near Infrared ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Near Infrared Fluorescence ◽

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Threshold adjustments for complementary metal‐oxide‐semiconductor optimization using B and As focused ion beams

Applied Physics Letters ◽

10.1063/1.96738 ◽

1986 ◽

Vol 48 (10) ◽

pp. 668-669 ◽

Author(s):

J. Y. Lee ◽

R. L. Kubena

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Ion Beams ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Focused Ion Beams

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