Light-emitting device with monolithic integration on bulk silicon in standard complementary metal oxide semiconductor technology

Journal of Nanophotonics ◽

10.1117/1.jnp.7.073082 ◽

2013 ◽

Vol 7 (1) ◽

pp. 073082 ◽

Author(s):

Kaikai Xu ◽

Guannpyng Li

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Monolithic Integration ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Bulk Silicon ◽

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A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal–oxide–semiconductor technology

Journal of Applied Physics ◽

10.1063/1.4795170 ◽

2013 ◽

Vol 113 (10) ◽

pp. 103106 ◽

Author(s):

Kaikai Xu ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Quantum Efficiency ◽

Light Emitting Diode ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

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Multifunctional silicon-based light emitting device in standard complementary metal—oxide—semiconductor technology

Chinese Physics B ◽

10.1088/1674-1056/20/1/018503 ◽

2011 ◽

Vol 20 (1) ◽

pp. 018503 ◽

Author(s):

Wei Wang ◽

Bei-Ju Huang ◽

Zan Dong ◽

Hong-Da Chen

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Light Emitting ◽

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Increased efficiency of silicon light-emitting diodes in a standard 1.2-μm silicon complementary metal oxide semiconductor technology

Optical Engineering ◽

10.1117/1.601792 ◽

1998 ◽

Vol 37 (7) ◽

pp. 2133 ◽

Author(s):

Lukas W. Snyman

Keyword(s):

Metal Oxide ◽

Light Emitting Diodes ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

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The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Chinese Physics B ◽

10.1088/1674-1056/20/12/129401 ◽

2011 ◽

Vol 20 (12) ◽

pp. 129401 ◽

Author(s):

Jun-Rui Qin ◽

Shu-Ming Chen ◽

Bi-Wei Liu ◽

Zheng Liu ◽

Bin Liang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Collection ◽

Single Event ◽

Semiconductor Technology ◽

Modulation Effect ◽

Single Event Transient ◽

Substrate Doping

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Soft Error Hardened Memory Design for Nanoscale Complementary Metal Oxide Semiconductor Technology

IEEE Transactions on Reliability ◽

10.1109/tr.2015.2410275 ◽

2015 ◽

Vol 64 (2) ◽

pp. 596-602 ◽

Author(s):

Jing Guo ◽

Liyi Xiao ◽

Tianqi Wang ◽

Shanshan Liu ◽

Xu Wang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

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Design and demonstration of antenna-coupled Schottky diodes in a foundry complementary metal-oxide semiconductor technology for electronic detection of far-infrared radiation

Journal of Applied Physics ◽

10.1063/1.5083689 ◽

2019 ◽

Vol 125 (19) ◽

pp. 194501 ◽

Author(s):

Z. Ahmad ◽

A. Lisauskas ◽

H. G. Roskos ◽

K. K. O

Keyword(s):

Metal Oxide ◽

Infrared Radiation ◽

Schottky Diodes ◽

Complementary Metal Oxide Semiconductor ◽

Far Infrared ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Electronic Detection ◽

Far Infrared Radiation

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Nanoplasmonic distributed Bragg reflector resonators for monolithic integration on a complementary metal-oxide-semiconductor platform

Applied Physics Letters ◽

10.1063/1.4817547 ◽

2013 ◽

Vol 103 (5) ◽

pp. 051107 ◽

Author(s):

M. P. Nielsen ◽

A. Y. Elezzabi

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Monolithic Integration ◽

Bragg Reflector ◽

Oxide Semiconductor ◽

Distributed Bragg Reflector

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Empirical implantation damage model and its effect on reverse short channel effect for 0.35 μm complementary metal–oxide–semiconductor technology

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589934 ◽

1998 ◽

Vol 16 (1) ◽

pp. 430

Author(s):

Jongmin Kim

Keyword(s):

Metal Oxide ◽

Damage Model ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Short Channel ◽

Short Channel Effect ◽

Implantation Damage ◽

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Injection-Avalanche-Based n+pn Silicon Complementary Metal–Oxide–Semiconductor Light-Emitting Device (450–750 nm) with 2-Order-of-Magnitude Increase in Light Emission Intensity

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2474 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2474-2480 ◽

Author(s):

Lukas W. Snyman ◽

Monuko du Plessis ◽

Herzl Aharoni

Keyword(s):

Metal Oxide ◽

Emission Intensity ◽

Light Emission ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Light Emitting ◽

Order Of Magnitude ◽

Magnitude Increase ◽

Light Emission Intensity

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Bit Swapping Linear Feedback Shift Register for Low Power Application Using 130nm Complementary Metal Oxide Semiconductor Technology

International Journal of Engineering ◽

10.5829/idosi.ije.2017.30.08b.03 ◽

2017 ◽

Keyword(s):

Metal Oxide ◽

Low Power ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Shift Register ◽

Oxide Semiconductor ◽

Linear Feedback ◽

Semiconductor Technology ◽

Feedback Shift Register ◽

Power Application

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