A Raman scattering study of self-assembled pure isotope Ge/Si(100) quantum dots

2002 ◽  
Vol 81 (20) ◽  
pp. 3855-3857 ◽  
Author(s):  
A. V. Kolobov ◽  
K. Morita ◽  
K. M. Itoh ◽  
E. E. Haller
2004 ◽  
Vol 21 (2-4) ◽  
pp. 312-316 ◽  
Author(s):  
D Bougeard ◽  
P.H Tan ◽  
M Sabathil ◽  
P Vogl ◽  
G Abstreiter ◽  
...  

1999 ◽  
Vol 60 (24) ◽  
pp. 16747-16757 ◽  
Author(s):  
E. Menéndez-Proupin ◽  
C. Trallero-Giner ◽  
S. E. Ulloa

2005 ◽  
Vol 87 (18) ◽  
pp. 183104 ◽  
Author(s):  
A. Abdi ◽  
T. B. Hoang ◽  
S. Mackowski ◽  
L. M. Smith ◽  
H. E. Jackson ◽  
...  

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2885-2887 ◽  
Author(s):  
T.V. Torchynska ◽  
J. Douda ◽  
S.S. Ostapenko ◽  
S. Jiménez-Sandoval ◽  
C. Phelan ◽  
...  

Author(s):  
E. SOBCZAK ◽  
R. NIETUBYĆ ◽  
J. B. PEŁKA ◽  
S. MAĆKOWSKI ◽  
E. JANIK ◽  
...  

2000 ◽  
Vol 61 (16) ◽  
pp. R10547-R10550 ◽  
Author(s):  
J. R. Huntzinger ◽  
J. Groenen ◽  
M. Cazayous ◽  
A. Mlayah ◽  
N. Bertru ◽  
...  

2002 ◽  
Vol 744 ◽  
Author(s):  
T. R. Yang ◽  
M. M. Dvoynenko ◽  
Z. C. Feng ◽  
I. Ferguson ◽  
H. H. Cheng

ABSTRACTA Raman scattering study for self-organized Ge dots on Si substrate is presented. Raman signals from the Ge islands and Si substrate have been separated, by means of difference Raman spectroscopy technique. The wetting layer thickness and strain were estimated from the line width and the position of the peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. As explained, the strain is observed to decrease with an increase of the Ge island height and the wetting layer thickness.


2001 ◽  
Vol 78 (7) ◽  
pp. 987-989 ◽  
Author(s):  
M. Kuball ◽  
J. Gleize ◽  
Satoru Tanaka ◽  
Yoshinobu Aoyagi

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