Raman Scattering Study for Self-Organized Ge Quantum Dots Formed on Si Substrate

2002 ◽  
Vol 744 ◽  
Author(s):  
T. R. Yang ◽  
M. M. Dvoynenko ◽  
Z. C. Feng ◽  
I. Ferguson ◽  
H. H. Cheng
Keyword(s):  
Quantum Dots ◽  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Layer Thickness ◽  
Line Width ◽  
Wetting Layer ◽  
Si Substrate ◽  
Spectroscopy Technique ◽  
Self Organized ◽  
Scattering Study

ABSTRACTA Raman scattering study for self-organized Ge dots on Si substrate is presented. Raman signals from the Ge islands and Si substrate have been separated, by means of difference Raman spectroscopy technique. The wetting layer thickness and strain were estimated from the line width and the position of the peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. As explained, the strain is observed to decrease with an increase of the Ge island height and the wetting layer thickness.

Morphologies of Self-Assembled Quantum Dots: A Variational Approach

2001 ◽  
Vol 707 ◽  
Author(s):  
R. Arief Budiman ◽  
Harry E. Ruda
Keyword(s):  
Quantum Dots ◽  
External Field ◽  
Layer Thickness ◽  
Variational Approach ◽  
3D Model ◽  
Strain Tensor ◽  
Wetting Layer ◽  
Strained Layer ◽  
Adatom Diffusion ◽  
Equilibrium Shapes

ABSTRACTWe construct a 3D model for coherent island formation by (i) using a novel 3D strain tensor to account for bulk strains and (ii) representing adatom diffusion as an external field that perturbs an otherwise flat strained layer. Equilibrium shapes of coherent islands and wetting layer thickness are obtained. Coherently compressed layers are typically unstable, but become stable in tension. Comparisons with Si1-xGex/Si(001) and Si0.5Ge0.5/Si1-xGex(001) layers are discussed.

Resonant Raman scattering in self-organized InAs/GaAs quantum dots

2000 ◽  
Vol 77 (23) ◽  
pp. 3746-3748 ◽  
Author(s):  
R. Heitz ◽  
H. Born ◽  
A. Hoffmann ◽  
D. Bimberg ◽  
I. Mukhametzhanov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Raman Scattering ◽  
Self Organized ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Sub-wetting layer continuum states in the self-organized quantum dot samples

2002 ◽  
Vol 737 ◽  
Author(s):  
Král K. ◽  
Zdeněk P. ◽  
Z. Khás ◽  
M. Čerňanský
Keyword(s):  
Quantum Dots ◽  
Optical Spectra ◽  
The Self ◽  
Localized States ◽  
Wetting Layer ◽  
Self Organized ◽  
Growth Method ◽  
Extended States ◽  
Layer Region ◽  
The Individual

ABSTRACTIn polar semiconductor samples of the self-organized quantum dots, grown by the Stranski-Krastanow growth method, the lowest-energy extended states of the motion of the electronic excitations, are assumed to be the wetting-layer states. The coupling between these extended states and the electronic states localized in the individual quantum dots, may influence the optical spectra of such samples in the sub-wetting layer region of energy. This effect is studied assuming the Fröhlich's coupling between the electrons and the polar optical phonons. The contribution of this interaction to the appearance of the sub-wetting layer continuum in the optical spectra, and to the level broadening of the localized states, pointed out in some experiments, is estimated.

A Raman scattering study of self-assembled pure isotope Ge/Si(100) quantum dots

2002 ◽  
Vol 81 (20) ◽  
pp. 3855-3857 ◽  
Author(s):  
A. V. Kolobov ◽  
K. Morita ◽  
K. M. Itoh ◽  
E. E. Haller
Keyword(s):  
Quantum Dots ◽  
Raman Scattering ◽  
Scattering Study ◽  
Self Assembled

Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate

2003 ◽  
Vol 83 (22) ◽  
pp. 4631-4633 ◽  
Author(s):  
Ye Zhang ◽  
Hongbo Jia ◽  
Rongming Wang ◽  
Chinping Chen ◽  
Xuhui Luo ◽  
...  
Keyword(s):  
Low Temperature ◽  
Raman Scattering ◽  
Zno Nanowires ◽  
Si Substrate ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Vertically Aligned ◽  
Scattering Study

Raman Spectrum Modification of CdSe/ZnS Quantum Dots at the Bio-conjugation to IgG Antibodies

2012 ◽  
Vol 1371 ◽  
Author(s):  
A. I. Diaz Cano ◽  
J. Douda ◽  
C. R. Gonzalez Vargas ◽  
K. Gazarian
Keyword(s):  
Quantum Dots ◽  
Raman Scattering ◽  
Raman Spectra ◽  
Pseudorabies Virus ◽  
Core Shell ◽  
Igg Antibodies ◽  
Si Substrate ◽  
Scattering Spectra ◽  
Raman Scattering Spectra ◽  
Color Emission

ABSTRACTThe paper presents the analysis of Raman scattering spectra of non-conjugated and bio-conjugated CdSe/ZnS core–shell quantum dots in the range of Raman shifts of 80 - 2000 cm-1. Commercial CdSe/ZnS QDs covered by polymer and characterized by color emission with the maxima at 605 and 655 nm (1.89 and 2.04 eV) were used. Raman scattering spectra were measured at 300K and the excitation by the line 785.0 nm of a solid state LED. The analysis of Raman spectra has shown that the QD bio-conjugation to the immunoglobulin G (IgG) antibodies of the Pseudorabies virus is accompanied by the changes of the intensity of Raman lines related to the CdSe/ZnS core/shell QDs, PEG polymer covered QDs, the Si substrate and/or some organic groups of antibody molecules. The comparison of Raman spectra of CdSe/ZnS QDs with different sizes in non-conjugated and bio-conjugated states gives the opportunity to detect the bio-conjugation without mistake.

Raman Scattering Study of Interface Reactions of Co/SiGe

1993 ◽  
Vol 320 ◽  
Author(s):  
Hong Ying ◽  
Zhihai Wang ◽  
D. B. Aldrich ◽  
D. E. Sayers ◽  
R. J. Nemanich
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Phase Transitions ◽  
Raman Scattering ◽  
Interface Reactions ◽  
Sige Alloy ◽  
Scattering Measurements ◽  
Scattering Study

ABSTRACTRaman scattering measurements are used to characterize Co/Si, Co/Ge and CO/Si0.8Ge0.2 thin film reactions. For Co/Si samples, the phase transitions Co--CoSi--CoSi2 are identified by Raman spectroscopy. For Co/Ge samples, Raman features associated with Co5Ge 7 and CoGe2 phases were observed. For CO/Si0.8Ge0.2 samples, only CoSi was identified along with Ge enriched SiGe alloy peaks. No features associated with CoGe or Co(SiGe) were found.

scholarly journals Raman Scattering Study on the Influence of E-Beam Bombardment on Si Electron Lens

Molecules ◽  
2021 ◽  
Vol 26 (9) ◽  
pp. 2766
Author(s):  
Geon-Woo Lee ◽  
Young-Bok Lee ◽  
Dong-Hyun Baek ◽  
Jung-Gon Kim ◽  
Ho-Seob Kim
Keyword(s):  
Electron Beam ◽  
Raman Scattering ◽  
Photoelectron Spectroscopy ◽  
Micro Electro Mechanical System ◽  
Si Substrate ◽  
X Ray ◽  
Electron Lens ◽  
Scattering Study ◽  
Pass Through ◽  
Non Destructive

Microcolumns have a stacked structure composed of an electron emitter, electron lens (source lens), einzel lens, and a deflector manufactured using a micro electro-mechanical system process. The electrons emitted from the tungsten field emitter mostly pass through the aperture holes. However, other electrons fail to pass through because of collisions around the aperture hole. We used Raman scattering measurements and X-ray photoelectron spectroscopy analyses to investigate the influence of electron beam bombardment on a Si electron lens irradiated by acceleration voltages of 0, 20, and 30 keV. We confirmed that the crystallinity was degraded, and carbon-related contamination was detected at the surface and edge of the aperture hole of the Si electron lens after electron bombardment for 24 h. Carbon-related contamination on the surface of the Si electron lens was verified by analyzing the Raman spectra of the carbon-deposited Si substrate using DC sputtering and a carbon rod sample. We report the crystallinity and the origin of the carbon-related contamination of electron Si lenses after electron beam bombardment by non-destructive Raman scattering and XPS analysis methods.

Raman scattering study in bio-conjugated core-shell CdSe/ZnS quantum dots

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2885-2887 ◽  
Author(s):  
T.V. Torchynska ◽  
J. Douda ◽  
S.S. Ostapenko ◽  
S. Jiménez-Sandoval ◽  
C. Phelan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Raman Scattering ◽  
Core Shell ◽  
Scattering Study
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