Growth and optical properties of SrBi2Nb2O9 ferroelectric thin films using pulsed laser deposition

2003 ◽  
Vol 93 (11) ◽  
pp. 9226-9230 ◽  
Author(s):  
Pingxiong Yang ◽  
David L. Carroll ◽  
John Ballato ◽  
Robert W. Schwartz
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes

Nonlinear optical properties in SrTiO3 thin films by pulsed laser deposition

2005 ◽  
Vol 135 (4) ◽  
pp. 221-225 ◽  
Author(s):  
Y. Deng ◽  
Y.L. Du ◽  
M.S. Zhang ◽  
J.H. Han ◽  
Z. Yin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Nonlinear Optical ◽  
Pulsed Laser ◽  
Nonlinear Optical Properties ◽  
Laser Deposition

c-axis oriented ferroelectric thin films of Si-substituted PbTiO3 on Si(100) by pulsed laser deposition: Boost for nonvolatile memory application

1998 ◽  
Vol 72 (10) ◽  
pp. 1179-1181 ◽  
Author(s):  
S. C. Purandare ◽  
V. R. Palkar ◽  
J. John ◽  
M. S. Multani ◽  
R. Pinto
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Nonvolatile Memory ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition

Effect of Annealing on Structural and Optical Properties of Pulsed Laser Deposited Titanium Dioxide Thin Films

2009 ◽  
Vol 67 ◽  
pp. 65-70 ◽  
Author(s):  
Gaurav Shukla ◽  
Alika K. Khare
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Annealing Temperature ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tio2 Thin Films ◽  
Post Annealing ◽  
Post Annealing Temperature

TiO2 is a widely studied material for many important applications in areas such as environmental purification, photocatalyst, gas sensors, cancer therapy and high effect solar cell. However, investigations demonstrated that the properties and applications of titanium oxide films depend upon the nature of the crystalline phases present in the films, i.e. anatase and rutile phases. We report on the pulsed laser deposition of high quality TiO2 thin films. Pulsed Laser deposition of TiO2 thin films were performed in different ambient viz. oxygen, argon and vacuum, using a second harmonic of Nd:YAG laser of 6 ns pulse width. These deposited films of TiO2 were further annealed for 5hrs in air at different temperatures. TiO2 thin films were characterized using x-ray diffraction, SEM, photoluminescence, transmittance and reflectance. We observed effect of annealing over structural, morphological and optical properties of TiO2 thin films. The anatase phase of as-deposited TiO2 thin films is found to change into rutile phase with increased annealing temperature. Increase in crystalline behaviour of thin films with post-annealing temperature is also observed. Surface morphology of TiO2 thin films is dependent upon ambient pressure and post- annealing temperature. TiO2 thin films are found to be optically transparent with very low reflectivity hence will be suitable for antireflection coating applications.

Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Hrtem Observation ◽  
Device Applications ◽  
Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

Sign in / Sign up

Export Citation Format

Share Document