Effect of Annealing on Structural and Optical Properties of Pulsed Laser Deposited Titanium Dioxide Thin Films

2009 ◽  
Vol 67 ◽  
pp. 65-70 ◽  
Author(s):  
Gaurav Shukla ◽  
Alika K. Khare
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Annealing Temperature ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tio2 Thin Films ◽  
Post Annealing ◽  
Post Annealing Temperature

TiO2 is a widely studied material for many important applications in areas such as environmental purification, photocatalyst, gas sensors, cancer therapy and high effect solar cell. However, investigations demonstrated that the properties and applications of titanium oxide films depend upon the nature of the crystalline phases present in the films, i.e. anatase and rutile phases. We report on the pulsed laser deposition of high quality TiO2 thin films. Pulsed Laser deposition of TiO2 thin films were performed in different ambient viz. oxygen, argon and vacuum, using a second harmonic of Nd:YAG laser of 6 ns pulse width. These deposited films of TiO2 were further annealed for 5hrs in air at different temperatures. TiO2 thin films were characterized using x-ray diffraction, SEM, photoluminescence, transmittance and reflectance. We observed effect of annealing over structural, morphological and optical properties of TiO2 thin films. The anatase phase of as-deposited TiO2 thin films is found to change into rutile phase with increased annealing temperature. Increase in crystalline behaviour of thin films with post-annealing temperature is also observed. Surface morphology of TiO2 thin films is dependent upon ambient pressure and post- annealing temperature. TiO2 thin films are found to be optically transparent with very low reflectivity hence will be suitable for antireflection coating applications.

A STUDY ON STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF ZnO FILM PREPARED BY PULSED LASER DEPOSITION ON Si(111) SUBSTRATES

2007 ◽  
Vol 21 (10) ◽  
pp. 1775-1785 ◽  
Author(s):  
XIAN-QI WEI ◽  
BAO-YUAN MAN ◽  
YU-TAI WANG ◽  
HUI-ZHAO ZHUANG
Keyword(s):  
Thin Films ◽  
Ir Spectra ◽  
Pulsed Laser Deposition ◽  
Annealing Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Zno Film ◽  
Post Annealing ◽  
Structural And Optoelectronic Properties

Zinc oxide (ZnO) thin films grown on Si (111) substrates by pulsed laser deposition at O 2 ambient pressure of 1.3 Pa at different deposition temperatures have been studied. ZnO thin films underwent annealing treatment after deposition. The structural and optoelectronic properties of deposited and annealed thin films have been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), infrared absorption (IR) spectra, four-probe measurements and photoluminescence (PL) spectra. The XRD observation shows that the best crystalline quality of ZnO thin films with hexagonal structure are those grown at a temperature of 400°C and annealed at a temperature of 600°C, respectively. AFM results show that the surface roughness of the ZnO films can be decreased with increasing annealing temperature up to 600°C and then increased by further increasing the annealing temperature. The intense absorption peak sited at 417.54 cm-1 has been observed by IR spectra for ZnO film grown at 400°C and annealed at 600°C, and the property of absorption is improved by post-annealing. ZnO film grown at 400°C with a resistivity of 12.3 Ω· cm shows the best n-type semiconductor property. The PL spectra show the dominant increase in UV emission by annealing. It is concluded that the best post-annealing temperature is about 600°C.

INFLUENCE OF ARGON PRESSURE ON MICROSTRUCTURE AND OPTICAL PROPERTIES OF Zn0.9Se:Co0.1 THIN FILMS PREPARED BY PULSED LASER DEPOSITION

2019 ◽  
Vol 26 (04) ◽  
pp. 1850176
Author(s):  
SHU FENG LI ◽  
LI WANG ◽  
XUEQIONG SU ◽  
DONGWEN GAO ◽  
LE KONG
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Argon Pressure ◽  
Laser Deposition ◽  
Collision Probability ◽  
Adsorption Effect ◽  
Gas Pressures

Zn[Formula: see text]Se:Co[Formula: see text] thin films were deposited on sapphire (Al2O3) substrates in argon atmosphere at various gas pressures by pulsed laser deposition. Influence of argon pressure on the thickness, surface morphology, crystal structure and optical properties of the thin films were investigated by various diagnosis tools. It was found that these physical properties were correlated to the argon pressure and appeared like a mutation between the pressure of 2[Formula: see text]Pa and 4[Formula: see text]Pa. As the deposition pressure changed from 2[Formula: see text]Pa to 4[Formula: see text]Pa, the collision probability between ablated species and argon molecule was increased, which resulted in the transformation of the deposition type from sputter effect to adsorption effect and the mutation of film thickness and structure. These in turn influence the transmission range and band gap of the films. All of the results suggest that the ambient pressure is a very important factor to the deposition of Zn[Formula: see text]Se:Co[Formula: see text] films by PLD.

Magneto-Optical Properties of Co-doped TiO2 Thin Films Grown by Pulsed Laser Deposition

2007 ◽  
Author(s):  
W. R. Branford ◽  
J. R. Neal ◽  
C. L. Spencer ◽  
G. A. Gehring ◽  
A. M. Fox ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tio2 Thin Films ◽  
Doped Tio2 ◽  
Co Doped

Epitaxial Growth of (Na,K)NbO3 based materials on SrTiO3 by pulsed laser deposition

2014 ◽  
Vol 1633 ◽  
pp. 19-24
Author(s):  
T. Hanawa ◽  
N. Kikuchi ◽  
K. Nishio ◽  
K. Tonooka ◽  
R. Wang ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Annealing Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cubic Crystals ◽  
Post Annealing ◽  
Preferential Evaporation ◽  
Atomically Flat ◽  
Post Annealing Temperature

ABSTRACTLead-free, piezoelectric (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films were epitaxially grown onto (100) SrTiO3 substrate via pulsed laser deposition. The effects of post-annealing temperature on the crystal phases, mosaic spread, and chemical composition of the deposited (Na,K)NbO3 and (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films were analyzed. Results indicate the epitaxial growth of (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films deposited at an oxygen pressure (PO2) of ≥40 Pa and substrate temperature (Ts) of 800°C. The alkaline-deficiency could be suppressed in the (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films deposited at PO2 ≥ 70 Pa. AFM profile of the (Na,K)NbO3 post-annealed at 1000°C indicates the epitaxial growth of film with atomically flat step-terrace structure, while that of the (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 film post-annealed at 1200°C shows relatively smooth surface with step-terrace structure and several cubic crystals. It was also found that the preferential evaporation of alkaline components could be suppressed by annealing under covered substrate condition.

Effect of Annealing Treatment on Electrical and Optical Properties of ATO Thin Films by Pulsed Laser Deposition

2012 ◽  
Vol 519 ◽  
pp. 236-239
Author(s):  
Fei Chen ◽  
Na Li ◽  
Qiang Shen ◽  
Chuan Bin Wang ◽  
Lian Meng Zhang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Pulsed Laser ◽  
Annealing Treatment ◽  
Laser Deposition ◽  
Electrical And Optical Properties ◽  
Average Transmittance

Transparent conducting antimony doped tin oxide (ATO) films have been prepared on quartz glass substrate by pulsed laser deposition (PLD) method which is distinctive to maintain the elemental components between the targets and the obtained thin films under optimal conditions. The effect of annealing temperature on the electrical and optical properties of the ATO thin films has been discussed. The annealing treatments have been often employed to reduce the defects and enlarge the grain size for more desirable crystalline structure. As the annealing temperature increases, the ATO thin films exhibited a slightly enhanced crystallinity. Furthermore, annealing treatment can promote both conductivity and transmittance significantly, especially for conductivity. The X-ray photoelectron spectroscopy is used to explore the variation of Sb5+/Sb3+ ratio against the annealing temperature. The optimal resistivity is 2.7×10-3 Ω cm and the average transmittance is about 92% at annealing temperature of 550 oC.

scholarly journals Efficient removal of 2-chlorophenol from aqueous solution using TiO2 thin films/alumina disc as photocatalyst by pulsed laser deposition

2021 ◽  
Vol 11 (2) ◽  
Author(s):  
S. Ismat Shah ◽  
Sawsan A. Mahmoud ◽  
Samar H. Bendary ◽  
Ahmed K. Aboulgheit ◽  
A. A. Salem ◽  
...  
Keyword(s):  
Thin Films ◽  
Photocatalytic Degradation ◽  
Pulsed Laser Deposition ◽  
Catalyst Surface ◽  
Irradiation Time ◽  
Pulsed Laser ◽  
Textural Properties ◽  
Laser Deposition ◽  
Hydroxyl Groups ◽  
Tio2 Thin Films

AbstractPulsed laser deposition facilitates the epitaxial deposition and growth of TiO2 at low temperature on hot substrate. In this study, nanosized nitrogen-doped TiO2 thin films were deposited on fabricated alumina disc-shaped and glass substrates. Textural properties of the fabricated disc and alumina disc-supported TiO2 were investigated using N2 adsorption–desorption isotherms, field emission scanning electron microscopy (FESEM), X-ray diffraction and Fourier transform infrared (FTIR) spectroscopy. FESEM showed the presence of single crystals of TiO2 on the alumina disc. FTIR showed the presence of octahedral TiO2 and different hydroxyl groups on the surface which is responsible for the photoactivity and also showed the functional groups adsorbed on the catalyst surface after the photocatalytic degradation. The concentration of 2-chlorophenol and the photo-redox intermediate products as a function of irradiation time was determined. The concentration of the produced chloride ion during the photocatalytic degradation was determined by an ion chromatography. The results showed that the photocatalytic activity of the catalyst decreased upon cycling. The obtained results were compared with nanostructured TiO2 supported on glass substrate. Higher efficiency of 100% degradation was achieved for TiO2/Al2O3 catalyst, whereas about 70% degradation of 2-CP was achieved using TiO2/glass. Different photointermediates of 2-CP degradation have been identified for each cycle. The difference of intermediates is supported by the adsorbed fragments on the catalyst surface.

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