scholarly journals Improved photoluminescence of InGaAsN–(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing

2003 ◽  
Vol 82 (18) ◽  
pp. 3008-3010 ◽  
Author(s):  
Nelson Tansu ◽  
Jeng-Ya Yeh ◽  
Luke J. Mawst
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Pause

GaInAsP/InP ORGANOMETALLIC VAPOR PHASE EPITAXY FOR RESEARCH AND FABRICATION OF DEVICES

1990 ◽  
Vol 01 (03n04) ◽  
pp. 347-367 ◽  
Author(s):  
KAZUHITO FURUYA ◽  
YASUYUKI MIYAMOTO
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Vapor Phase ◽  
Optical Communication ◽  
Ballistic Transport ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Technique

GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is widely used for the fabrication of lasers and detectors used in optical communication. Here we describe the apparatus and growth technique of OMVPE and point out important growth conditions to obtain device quality single-crystal materials. Our research includes the use of OMVPE for the study of quantum-well lasers, ballistic-transport electron devices and nanometer heterostructures.

Atomic steps in thin GaInAs/lnP quantum‐well structures grown by organometallic vapor phase epitaxy

1988 ◽  
Vol 63 (8) ◽  
pp. 2674-2680 ◽  
Author(s):  
T. Y. Wang ◽  
K. L. Fry ◽  
A. Persson ◽  
E. H. Reihlen ◽  
G. B. Stringfellow
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Atomic Steps ◽  
Quantum Well Structures
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