Effects of dielectric structure of HfO2 on carrier generation rate in Si substrate and channel mobility

2004 ◽  
Vol 84 (12) ◽  
pp. 2148-2150 ◽  
Author(s):  
Chang Yong Kang ◽  
Hag-Ju Cho ◽  
Rino Choi ◽  
Chang Seok Kang ◽  
Young Hee Kim ◽  
...  
Keyword(s):  
Generation Rate ◽  
Dielectric Structure ◽  
Si Substrate ◽  
Carrier Generation ◽  
Channel Mobility

scholarly journals Increased carrier generation rate in Si nanocrystals in SiO2 investigated by induced absorption

2011 ◽  
Vol 99 (5) ◽  
pp. 053126 ◽  
Author(s):  
W. D. A. M. de Boer ◽  
M. T. Trinh ◽  
D. Timmerman ◽  
J. M. Schins ◽  
L. D. A. Siebbeles ◽  
...  
Keyword(s):  
Generation Rate ◽  
Carrier Generation ◽  
Induced Absorption ◽  
Si Nanocrystals

Efficiency enhancement of silicon solar cell using effective interface face method in antireflective coating layers

2020 ◽  
Vol 31 (05) ◽  
pp. 2050076
Author(s):  
M. Ismail Fathima ◽  
K. S. Joseph Wilson
Keyword(s):  
Solar Cell ◽  
Internal Quantum Efficiency ◽  
Light Trapping ◽  
Generation Rate ◽  
Antireflective Coating ◽  
Multiple Reflections ◽  
Carrier Generation ◽  
Arc Model ◽  
Fabry Perot ◽  
Narrow Spectral Range

Carrier generation is one of the important processes in solar cell operations. The generation rate depends on the number of photons absorbed by solar cell. This absorption of photons is affected by the reflection losses. The light trapping technique is used to minimize the reflection loss. In this work, a theoretical design of Effective Interface Antireflective Coating (EI-ARC) in solar cell is proposed which is based on the theory of Fabry–Perot interference filters. This design is composed of a space index layer with two subsystems of multilayer, which allows multiple reflections within it. It is shown that the combination of this two systems yields high transmission values over a narrow spectral range. This EI-ARC model increases the Internal Quantum Efficiency (IQE) and carrier generation rate of solar cell. These parameters are significant to raise the efficiency of the solar cell.

Saturation behavior of the Light-Induced Defect Density in Hydrogenated Amorphous Silicon

1990 ◽  
Vol 192 ◽  
Author(s):  
H. R. Park ◽  
J. Z. Liu ◽  
P. Roca i Cabarrocas ◽  
A. Maruyama ◽  
M. Isomura ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Urbach Energy ◽  
Defect Density ◽  
Generation Rate ◽  
Carrier Generation ◽  
Defect Generation ◽  
Ion Laser ◽  
Hydrogenated Amorphous ◽  
Defect Densities

ABSTRACTUsing a Kr ion laser (λ = 647.1 nm) to produce a carrier generation rate G of 3 × 1020 cm−3s−1, we have saturated the light-induced defect generation in hydrogenated (and fluorinated) amorphous silicon (a-Si:H(F)), within a few hours near room temperature. While the defect generation rate scales roughly with 1/G2, the saturation defect densities Ns,sat are essentially independent of G. The saturation is not due to thermal annealing. We have further measured Ns,sat m 37 a-Si:H(F) films grown in six different reactors under different conditions. The results show that Ns,sat lies between 5 × 1016 and 2 × 1017 cm−3, that Ns,sat drops with decreasing optical gap and hydrogen content, and that Ns,sat is not correlated with the initial defect density or with the Urbach energy.

Approximation of the carrier generation rate in illuminated silicon

1985 ◽  
Vol 28 (12) ◽  
pp. 1241-1243 ◽  
Author(s):  
Jože Furlan ◽  
Slavko Amon
Keyword(s):  
Generation Rate ◽  
Carrier Generation

Shot Noise in Back-Biased Step Junctions with Exponential Carrier Generation Rate

1991 ◽  
Vol 30 (Part 1, No. 1) ◽  
pp. 31-32 ◽  
Author(s):  
Kazuhiro Sasaki ◽  
Kazunori Sato
Keyword(s):  
Shot Noise ◽  
Generation Rate ◽  
Carrier Generation

Analytical Study of Carrier Generation Rate in Graphene Nanoscroll

Plasmonics ◽  
2019 ◽  
Vol 14 (6) ◽  
pp. 1711-1716
Author(s):  
Iraj S. Amiri ◽  
Hossein Mohammadi
Keyword(s):  
Analytical Study ◽  
Generation Rate ◽  
Carrier Generation

Effect of stress on the carrier generation rate in gold-doped silicon

1970 ◽  
Vol 13 (12) ◽  
pp. 1519-1526 ◽  
Author(s):  
J.L. Prince ◽  
J.J. Wortman ◽  
L.K. Monteith ◽  
J.R. Hauser
Keyword(s):  
Generation Rate ◽  
Carrier Generation ◽  
Doped Silicon
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