Properties of Rare‐Earth Nitrides

1964 ◽  
Vol 35 (5) ◽  
pp. 1534-1538 ◽  
Author(s):  
N. Sclar
2013 ◽  
Vol 114 (19) ◽  
pp. 193708 ◽  
Author(s):  
A. B. Mei ◽  
A. Rockett ◽  
L. Hultman ◽  
I. Petrov ◽  
J. E. Greene

1968 ◽  
Vol 7 (7) ◽  
pp. 1457-1458 ◽  
Author(s):  
B. Magyar

2014 ◽  
Vol 40 (1) ◽  
pp. 1993-2004 ◽  
Author(s):  
R. Rajeswarapalanichamy ◽  
A.T. Asvini Meenaatci ◽  
K. Iyakutti

1992 ◽  
Vol 1 (2) ◽  
pp. 193-203 ◽  
Author(s):  
G. C. Hadjipanayis ◽  
Y. Z. Wang ◽  
E. W. Singleton ◽  
W. B. Yelon

ChemInform ◽  
2010 ◽  
Vol 26 (41) ◽  
pp. no-no
Author(s):  
G. C. HADJIPANAYIS ◽  
Y. H. ZHENG ◽  
A. S. MURTHY ◽  
W. GONG ◽  
F. M. YANG

ChemInform ◽  
2008 ◽  
Vol 39 (19) ◽  
Author(s):  
H. Imamura ◽  
T. Imahashi ◽  
M. Zaimi ◽  
Y. Sakata

2021 ◽  
Author(s):  
◽  
A. R. H. Preston

<p>The rare-earth nitrides (ReNs) are a class of novel materials with potential for use in spintronics applications. Theoretical studies indicate that among the ReNs there could be half-metals, semimetals and semiconductors, all exhibiting strong magnetic ordering. This is because of the complex interaction between the partially filled rare-earth 4f orbital and the nitrogen 2p valence and rare-earth 5d conduction bands. This thesis uses experimental and theoretical techniques to probe the ReN electronic structure. Thin films of SmN, EuN, GdN, DyN, LuN and HfN have been produced for study. Basic characterization shows that the films are of a high quality. The result of electrical transport, magnetometry, and optical and x-ray spectroscopy are interpreted to provide information on the electronic structure. SmN, GdN, DyN are found to be semiconductors in their ferromagnetic ground state while HfN is a metal. Results are compared with density functional theory (DFT) based calculations. The free parameters resulting from use of the local spin density approximation with Hubbard-U corrections as the exchange-correlation functional are adjusted to reach good agreement with x-ray absorption and emission spectroscopy at the nitrogen K-edge. Resonant x-ray emission is used to experimentally measure valence band dispersion of GdN. No evidence of the rare-earth 4f levels is found in any of the K-edge spectroscopy, which is consistent with the result of M-edge x-ray absorption which show that the 4f wave function of the rare-earths in the ReNs are very similar to those of rare-earth metal. An auxillary resonant x-ray emission study of ZnO is used to map the dispersion of the electronic band structure across a wide range of the Brillouin zone. The data, and calculations based on GW corrections to DFT, together provide a detailed picture of the bulk electronic band structure.</p>


2021 ◽  
Author(s):  
◽  
Simon Granville

<p>Materials that combine the useful properties of magnetic and semiconducting behaviours are sought for new and developing applications in electronics. In this thesis experimental studies of the properties of disordered thin films of several potentially magnetic semiconducting materials are presented. Previous research on the diluted magnetic semiconductor GaMnN is reviewed as an introduction to a study of GaMnN thin films grown with an ion-assisted deposition technique. Several complementary compositional and structural analysis techniques are used to determine that films can be grown with as much as 18 at. % Mn content and that contain no impurity phases, as are often detected in single crystalline GaMnN preparations with high Mn concentrations. The effects of varying Mn contents on the resistive, optical and magnetic properties of the thin films are investigated. The structural, electronic and magnetic properties of thin films of the potential impurity phase MnN have also been investigated and compared with band structure calculations. Recent predictions that the rare earth nitrides may have extremely useful electronic properties have been almost untested in the literature. A procedure for growing rare earth nitride thin films and capping them to protect from reaction with water vapour allows their resistivity, structural and magnetic properties to be established. The results on GdN, SmN, ErN and DyN support the recent predictions, and a more thorough study on GdN reveals that this material is a ferromagnetic semiconductor below 69 K.</p>


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