Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position
Keyword(s):
Keyword(s):
Keyword(s):
1995 ◽
Vol 34
(Part 1, No. 5A)
◽
pp. 2241-2246
◽
Keyword(s):
1996 ◽
Vol 35
(Part 1, No. 4A)
◽
pp. 2068-2072
Keyword(s):
1984 ◽
Vol 52
(2)
◽
pp. 93-97
◽
Keyword(s):