Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells

1995 ◽  
Vol 34 (Part 1, No. 5A) ◽  
pp. 2241-2246 ◽  
Author(s):  
Toshiyuki Matsumoto ◽  
Masanobu Haraguchi ◽  
Masuo Fukui ◽  
Masahito Yamaguchi ◽  
HitoshiKubo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Experimental Observation ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Si Doped

Optical properties and recombination dynamics of InGaN/GaN multiple quantum wells with Si-doped barriers

2001 ◽  
Vol 118 (11) ◽  
pp. 547-551 ◽  
Author(s):  
Mee-Yi Ryu ◽  
Phil Won Yu ◽  
Eunsoon Oh ◽  
Chulsoo Sone ◽  
Okhyun Nam ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Si Doped ◽  
Recombination Dynamics

Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE

2007 ◽  
Vol 4 (7) ◽  
pp. 2494-2497
Author(s):  
Da-Bing Li ◽  
Takuya Katsuno ◽  
Masakazu Aoki ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Structural And Optical Properties ◽  
Si Doped

Temperature Dependence of Raman Spectra in Si-doped GaAs/AlAs Multiple Quantum Wells

1996 ◽  
Vol 35 (Part 1, No. 4A) ◽  
pp. 2068-2072
Author(s):  
Toshiyuki Matsumoto ◽  
Masanobu Haraguchi ◽  
Masuo Fukui ◽  
Hitoshi Kubo ◽  
Chihiro Hamaguchi
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Raman Spectra ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Si Doped

Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells

2001 ◽  
Vol 693 ◽  
Author(s):  
B. Monemar ◽  
P.P. Paskov ◽  
J.P. Bergman ◽  
G. Pozina ◽  
S. Kamiyama ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Depletion Region ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Exciton Peak ◽  
Band Bending ◽  
Near Surface ◽  
Si Doped ◽  
Hole Confinement ◽  
Strong Depletion

AbstractIn0.11Ga0.89N/In0.01Ga0.99N multiple quantum wells (MQWs) with heavily Si-doped barriers are shown to be very sensitive to a near surface depletion field. For a sample with 3 QWs, similar to what is often used in LEDs, only the QW most distant from the surface is observed in photoluminescence (PL). The appearance of a second lower energy PL peak below the ordinary QW exciton peak is a proof of a substantial band bending across the MQW structure. A similar effect seems to occur in pn-junctions having an MQW in the depletion region of a highly doped n-side. The strong depletion field is suggested to explain these results. The apparent absence of PL from the QWs closer to the surface (pn-junction) is tentatively ascribed to a loss of hole confinement in the strong depletion field.

Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position

2004 ◽  
Vol 84 (25) ◽  
pp. 5071-5073 ◽  
Author(s):  
H. Haratizadeh ◽  
B. Monemar ◽  
P. P. Paskov ◽  
J. P. Bergman ◽  
B. E. Sernelius ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Study ◽  
Si Doped

Thermal stability of Si-doped InGaN multiple-quantum wells for high efficiency light emitting diodes

2010 ◽  
Vol 108 (10) ◽  
pp. 102813 ◽  
Author(s):  
Sung-Nam Lee ◽  
Jihoon Kim ◽  
Kyoung-Kook Kim ◽  
Hyunsoo Kim ◽  
Han-Ki Kim
Keyword(s):  
Thermal Stability ◽  
Quantum Wells ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Si Doped ◽  
Thermal Stability Of
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