Rectifying characteristics of WSi0.8–GaN Schottky barrier diodes with a GaN cap layer grown at low temperature

2005 ◽  
Vol 98 (3) ◽  
pp. 036106
Author(s):  
J. K. Sheu ◽  
M. L. Lee ◽  
W. C. Lai ◽  
H. C. Tseng ◽  
G. C. Chi
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Cap Layer

Ultraviolet photodetectors based on low temperature processed ZnO/PEDOT:PSS Schottky barrier diodes

2015 ◽  
Vol 37 ◽  
pp. 14-18 ◽  
Author(s):  
N. Hernandez-Como ◽  
G. Rivas-Montes ◽  
F.J. Hernandez-Cuevas ◽  
I. Mejia ◽  
J.E. Molinar-Solis ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Ultraviolet Photodetectors

GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

2003 ◽  
Vol 82 (17) ◽  
pp. 2913-2915 ◽  
Author(s):  
M. L. Lee ◽  
J. K. Sheu ◽  
W. C. Lai ◽  
S. J. Chang ◽  
Y. K. Su ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer

GaN Schottky barrier photodiode on Si (111) with low-temperature-grown cap layer

2009 ◽  
Vol 481 (1-2) ◽  
pp. L15-L19 ◽  
Author(s):  
L.S. Chuah ◽  
Z. Hassan ◽  
H. Abu Hassan ◽  
N.M. Ahmed
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer

Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

2003 ◽  
Vol 94 (3) ◽  
pp. 1753-1757 ◽  
Author(s):  
M. L. Lee ◽  
J. K. Sheu ◽  
W. C. Lai ◽  
Y. K. Su ◽  
S. J. Chang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer

Ga-Doped ZnO/GaN Schottky Barrier UV Band-Pass Photodetector with a Low-Temperature-Grown GaN Cap Layer

2010 ◽  
Vol 49 (4) ◽  
pp. 04DF12
Author(s):  
Kuo-Hua Chang ◽  
Jinn-Kong Sheu ◽  
Ming-Lun Lee ◽  
Kai-Shun Kang ◽  
Jing-Fong Huang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer ◽  
Band Pass ◽  
Doped Zno
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