GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

2003 ◽  
Vol 82 (17) ◽  
pp. 2913-2915 ◽  
Author(s):  
M. L. Lee ◽  
J. K. Sheu ◽  
W. C. Lai ◽  
S. J. Chang ◽  
Y. K. Su ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer

GaN Schottky barrier photodiode on Si (111) with low-temperature-grown cap layer

2009 ◽  
Vol 481 (1-2) ◽  
pp. L15-L19 ◽  
Author(s):  
L.S. Chuah ◽  
Z. Hassan ◽  
H. Abu Hassan ◽  
N.M. Ahmed
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer

Rectifying characteristics of WSi0.8–GaN Schottky barrier diodes with a GaN cap layer grown at low temperature

2005 ◽  
Vol 98 (3) ◽  
pp. 036106
Author(s):  
J. K. Sheu ◽  
M. L. Lee ◽  
W. C. Lai ◽  
H. C. Tseng ◽  
G. C. Chi
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Cap Layer

Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

2003 ◽  
Vol 94 (3) ◽  
pp. 1753-1757 ◽  
Author(s):  
M. L. Lee ◽  
J. K. Sheu ◽  
W. C. Lai ◽  
Y. K. Su ◽  
S. J. Chang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer

Ga-Doped ZnO/GaN Schottky Barrier UV Band-Pass Photodetector with a Low-Temperature-Grown GaN Cap Layer

2010 ◽  
Vol 49 (4) ◽  
pp. 04DF12
Author(s):  
Kuo-Hua Chang ◽  
Jinn-Kong Sheu ◽  
Ming-Lun Lee ◽  
Kai-Shun Kang ◽  
Jing-Fong Huang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer ◽  
Band Pass ◽  
Doped Zno

Reduction of Dark Current in AlGaN–GaN Schottky-Barrier Photodetectors With a Low-Temperature-Grown GaN Cap Layer

2004 ◽  
Vol 25 (9) ◽  
pp. 593-595 ◽  
Author(s):  
M.L. Lee ◽  
J.K. Sheu ◽  
Y.K. Su ◽  
S.J. Chang ◽  
W.C. Lai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Dark Current ◽  
Cap Layer

Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer

2003 ◽  
Vol 798 ◽  
Author(s):  
G. C. Chi ◽  
J. K. Sheu ◽  
M. L. Lee ◽  
C. J. Kao ◽  
Y. K. Su ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dark Current ◽  
Reverse Bias ◽  
Incident Light ◽  
Response Speed ◽  
Light Wavelength ◽  
Cap Layer ◽  
Incident Light Wavelength

ABSTRACTAlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a –1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.

GZO/GaN Schottky Barrier Ultraviolet Band-pass Photodetector with a Low-temperature-grown GaN Cap Layer

2009 ◽  
Author(s):  
K. H. Chang ◽  
J. K. Sheu ◽  
M. L. Lee ◽  
T. H. Hsueh ◽  
C. C. Yang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer ◽  
Band Pass
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