ultraviolet photodetectors
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Author(s):  
Ting Xu ◽  
Hong Yin ◽  
Pengwei Yu ◽  
Zhimin He ◽  
Ning Chen ◽  
...  

2022 ◽  
pp. 152352
Author(s):  
Zeping Li ◽  
Xiong Yu ◽  
Yunhao Zhu ◽  
Sisi Liu ◽  
Xiaoyan Wen ◽  
...  

2021 ◽  
pp. 2100997
Author(s):  
Junyu He ◽  
Peilong Xu ◽  
Ruifu Zhou ◽  
Hao Li ◽  
Hongliang Zu ◽  
...  

Author(s):  
Walter Water ◽  
Cheng-Je Li ◽  
Liang-Wen Ji

A surface acoustic wave ultraviolet photodetector was fabricated on a ZnO thin film with pure and Ni-doped ZnO nanorods deposited on a Si substrate. Piezoelectric ZnO thin films were grown on Si through radio-frequency magnetron sputtering, and ZnO nanorods were synthesized on ZnO thin films by using the hydrothermal method. The crystalline structure, surface morphology, and luminescent characteristics of ZnO films and nanorods were examined using X-ray diffraction and photoluminescence spectrometers and scanning electron microscope. The performance of the surface acoustic wave photodetector was evaluated using the variations in surface capacitance, insertion loss, and phase shift. ZnO nanorods became shorter and thicker with an increase in the concentration of Ni doping; however, the variations in surface capacitance of Ni-doped ZnO nanorods were greater than those of pure ZnO nanorods obtained under ultraviolet irradiation. Devices with Ni-doped ZnO nanorods exhibited larger shifts in insertion loss and phase than those with pure ZnO nanorods did.


Author(s):  
Ruifan Tang ◽  
Guanqi Li ◽  
Ying Jiang ◽  
Na Gao ◽  
Jinchai Li ◽  
...  

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Hogyoung Kim

AbstractGallium oxide (Ga2O3) is a promising semiconductor for high power devices and solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and high thermal stability. Recently, a considerable achievement has been obtained for the growth of high-quality β-Ga2O3 and high performance β-Ga2O3 based devices. However, rapid advance in device performance can be limited by the critical issues of metal contacts to β-Ga2O3 such as barrier height, leakage current, ohmic contact, and surface, interfacial and deep states. This article aims to provide a review on the recent studies in the control and understanding of metal contacts to β-Ga2O3, particularly in terms of the barrier formation. This review suggests that understanding the current transport mechanisms of metal contacts to β-Ga2O3 more thoroughly is necessary to enhance the performance, stability and reliability of β-Ga2O3 based devices.


Author(s):  
Alphi Maria Thomas ◽  
Chongsei Yoon ◽  
Swathi Ippili ◽  
Venkatraju Jella ◽  
Tae-Youl Yang ◽  
...  

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