Self-Assemble Monolayer Dependent Field Effect Transistor’s Performance Based On Tetracene Single-Crystal

Organic field effect transistors with an active layer based on the tetracene single-crystal were fabricated. It was found that organosilane self-assemble monolayer (SAM) modified device with tetracene single-crystals gave higher mobility and on/off ratio rather than untreated device. SAM modified tetracene single-crystal transistors with parylene gate insulator showed the highest mobility of 0.66 cm2 V-1 s-1 and high on/off ratio of ~104. This finding demonstrates that SAM treatment decrease the charge leakage between source and drain which help to decrease the off current with greater extent and increase the on current slightly of the tetracene single-crystal field-effect transistors. Journal of Bangladesh Chemical Society, Vol. 25(2), 194-199, 2012 DOI: http://dx.doi.org/10.3329/jbcs.v25i2.15086

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2-Positional pyrene end-capped oligothiophenes for high performance organic field effect transistors

Chemical Communications ◽

10.1039/c6cc00948d ◽

2016 ◽

Vol 52 (26) ◽

pp. 4800-4803 ◽

Cited By ~ 33

Author(s):

Kazuaki Oniwa ◽

Hiromasa Kikuchi ◽

Hidekazu Shimotani ◽

Susumu Ikeda ◽

Naoki Asao ◽

...

Keyword(s):

Single Crystal ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Hole Mobility ◽

Central Unit ◽

Organic Field Effect Transistors ◽

Crystal Field Effect ◽

Effect Transistor

A new co-oligomer BPy2T with two 2-positional pyrenes as terminal groups and bithiophene as a central unit showed a high hole mobility of 3.3 cm2 V−1 s−1 in a single crystal field effect transistor.

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Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator

Applied Physics Letters ◽

10.1063/1.2360207 ◽

2006 ◽

Vol 89 (15) ◽

pp. 152110 ◽

Cited By ~ 13

Author(s):

Nobuya Hiroshiba ◽

Ryotaro Kumashiro ◽

Katsumi Tanigaki ◽

Taishi Takenobu ◽

Yoshihiro Iwasa ◽

...

Keyword(s):

Single Crystal ◽

Crystal Field ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Insulator ◽

Crystal Field Effect ◽

High K ◽

Effect Transistor

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2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

Materials Advances ◽

10.1039/d1ma00215e ◽

2021 ◽

Author(s):

Suman Yadav ◽

Shivani Sharma ◽

Satinder K Sharma ◽

Chullikkattil P. Pradeep

Keyword(s):

Organic Semiconductors ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Organic Thin Film ◽

Effect Transistor ◽

Solution Processable ◽

P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

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Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2016.12286 ◽

2016 ◽

Vol 16 (4) ◽

pp. 3267-3272

Author(s):

Masatoshi Sakai ◽

Norifumi Moritoshi ◽

Shigekazu Kuniyoshi ◽

Hiroshi Yamauchi ◽

Kazuhiro Kudo ◽

...

Keyword(s):

Electric Field ◽

Single Crystal ◽

Temperature Dependence ◽

Crystal Field ◽

Field Effect ◽

Field Effect Transistor ◽

Electrical Conductance ◽

Charge Order ◽

Crystal Field Effect ◽

Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

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