Vertical injection thin-film AlGaN∕AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes

2006 ◽  
Vol 89 (24) ◽  
pp. 241113 ◽  
Author(s):  
L. Zhou ◽  
J. E. Epler ◽  
M. R. Krames ◽  
W. Goetz ◽  
M. Gherasimova ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Well ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Vertical Injection ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region

2009 ◽  
Vol 2 (9) ◽  
pp. 092102 ◽  
Author(s):  
Vinod Adivarahan ◽  
Ahmad Heidari ◽  
Bin Zhang ◽  
Qhalid Fareed ◽  
Monirul Islam ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Region ◽  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Vertical Injection ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping

2016 ◽  
Vol 8 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Jianjun Chang ◽  
Dunjun Chen ◽  
Junjun Xue ◽  
Kexiu Dong ◽  
Bin Liu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission

2003 ◽  
Vol 83 (17) ◽  
pp. 3456-3458 ◽  
Author(s):  
JianPing Zhang ◽  
Shuai Wu ◽  
Shiva Rai ◽  
Vasavi Mandavilli ◽  
Vinod Adivarahan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Long Wave ◽  
Deep Ultraviolet ◽  
Wave Emission ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes

2019 ◽  
Vol 9 (5) ◽  
pp. 871 ◽  
Author(s):  
Abu Islam ◽  
Dong-Soo Shim ◽  
Jong-In Shim
Keyword(s):  
Potential Energy ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Energy Fluctuation ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different indium compositions. Various macroscopic characterizations have been performed to show that the strain-induced piezoelectric field (FPZ), the crystal quality, and the internal quantum efficiency increase with the sample’s indium composition. This improved performance is owing to the carrier recombination at relatively defect-free indium-rich localized sites, caused by the local in-plane potential-energy fluctuation in MQWs. The potential-energy fluctuation in MQWs are considered to be originating from the combined effects of the inhomogeneous distribution of point defects, FPZ, and indium compositions.

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