Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization

2007 ◽  
Vol 101 (4) ◽  
pp. 044514 ◽  
Author(s):  
J. W. Little ◽  
S. P. Svensson ◽  
W. A. Beck ◽  
A. C. Goldberg ◽  
S. W. Kennerly ◽  
...  
2016 ◽  
Author(s):  
Kouhei Miura ◽  
Ken-ichi Machinaga ◽  
Sundararajan Balasekaran ◽  
Takahiko Kawahara ◽  
Masaki Migita ◽  
...  

2017 ◽  
Vol 67 (2) ◽  
pp. 149 ◽  
Author(s):  
K.C. Goma Kumari ◽  
H.M. Rawool ◽  
S. Chakrabarti

In this study, fabricated 320 × 256 infrared focal plane arrays (FPAs) were realised using a GaSb/InAs-based type-II superlattice heterostructure for midwave infrared (MWIR) imaging. We report here the optimized fabrication and characterization of single-pixel infrared detectors and FPAs. MWIR spectral response up to 5 μm of these single-pixel detectors was evident up to 250 K. Responsivity was measured to be 1.62 A/W at 0.8 V and 80 K. Current–voltage characteristics at room temperature (300 K) and at low temperature (18 K) revealed the resistance and dark current variation of the device in the operating bias region. Moreover, good thermal images were obtained at device temperatures up to 150 K for low-temperature targets. Low noise equivalent difference in temperature was measured to be 58 mK at 50 K and 117 mK at 120 K.


2011 ◽  
Author(s):  
Martin Walther ◽  
Robert Rehm ◽  
Johannes Schmitz ◽  
Jasmin Niemasz ◽  
Frank Rutz ◽  
...  

2012 ◽  
Vol 48 (2) ◽  
pp. 221-228 ◽  
Author(s):  
Abbas Haddadi ◽  
Shaban Ramezani-Darvish ◽  
Guanxi Chen ◽  
Anh Minh Hoang ◽  
Binh-Minh Nguyen ◽  
...  

2017 ◽  
Vol 67 (2) ◽  
pp. 135 ◽  
Author(s):  
P.C. Klipstein ◽  
E. Avnon ◽  
Y. Benny ◽  
A. Fraenkel ◽  
A. Glozman ◽  
...  

The XBn/XBp family of barrier detectors enables diffusion limited dark currents comparable with HgxCd1-xTe Rule-07 and high quantum efficiencies. SCD’s XBp type II superlattice (T2SL) detector contains InAs/GaSb and InAs/AlSb T2SLs, and was designed for the long wave infrared (LWIR) atmospheric window using k · p based modeling of the energy bands and photo-response. Wafers are grown by molecular beam epitaxy and are fabricated into focal plane array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridisation, under-fill, and back-side polishing. The 640 × 512 pixel, 15 μm pitch, detector goes by the name of ‘Pelican-D LW’ and exhibits a quantum efficiency of ~ 50 per cent with background limited performance at an operating temperature of 77 K. It has a cut-off wave length of ~ 9.5 μm, with a pixel operability of above 99 per cent. The detector gives a very stable image with a residual non uniformity of below 0.04 per cent over its useful dynamic range. A new digital read-out integrated circuit has been designed so that the complete detector closely follows the configuration of SCD’s MWIR Pelican-D detector.


2018 ◽  
Vol 26 (8) ◽  
pp. 11034 ◽  
Author(s):  
Jean Nghiem ◽  
Julien Jaeck ◽  
Jerome Primot ◽  
Christophe Coudrain ◽  
Sophie Derelle ◽  
...  

2018 ◽  
Vol 10 (6) ◽  
pp. 1-6 ◽  
Author(s):  
David Z. Ting ◽  
Sir B. Rafol ◽  
Sam A. Keo ◽  
Jean Nguyen ◽  
Arezou Khoshakhlagh ◽  
...  

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