Erratum: “Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer” [J. Appl. Phys. 102, 053519 (2007)]
2007 ◽
Vol 46
(No. 40)
◽
pp. L970-L972
◽
2006 ◽
Vol 50
(2)
◽
pp. 119-124
◽
2010 ◽
Vol 49
(4)
◽
pp. 04DG14
◽
2008 ◽
Vol 47
(4)
◽
pp. 2954-2956
◽