Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC

2008 ◽  
Vol 103 (3) ◽  
pp. 033701 ◽  
Author(s):  
X. D. Chen ◽  
S. Dhar ◽  
T. Isaacs-Smith ◽  
J. R. Williams ◽  
L. C. Feldman ◽  
...  
Keyword(s):  
Electron Capture ◽  
Interface States ◽  
Emission Properties

Electron capture and emission at interface states in As-oxidized and NO-annealed SiO2/4H-SiC

2007 ◽  
Author(s):  
Xudong Chen ◽  
Sarit Dhar ◽  
Tamara Isaacs-Smith ◽  
John R. Williams ◽  
Leonard C. Feldman ◽  
...  
Keyword(s):  
Electron Capture ◽  
Interface States

ARGON RECOIL ION ELECTRON CAPTURE FROM NEUTRAL ARGON AND HELIUM STUDIED BY TIME RESOLVED V.U.V. SPECTROSCOPY

1989 ◽  
Vol 50 (C1) ◽  
pp. C1-363-C1-369
Author(s):  
I. LESTEVEN-VAISSE ◽  
M. CHANTEPIE ◽  
F. FOLKMANN ◽  
D. LECLER ◽  
A. BEN SITEL
Keyword(s):  
Electron Capture ◽  
Time Resolved
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