Nanoring magnetic tunnel junction and its application in magnetic random access memory demo devices with spin-polarized current switching (invited)

2008 ◽  
Vol 103 (7) ◽  
pp. 07E933 ◽  
Author(s):  
X. F. Han ◽  
Z. C. Wen ◽  
H. X. Wei
Keyword(s):  
Tunnel Junction ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Random Access Memory ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Current Switching ◽  
Spin Polarized

Development of Hard Mask Process on Magnetic Tunnel Junction for a 4-Mbit Magnetic Random Access Memory

2007 ◽  
Vol 46 (7A) ◽  
pp. 4121-4124 ◽  
Author(s):  
Kiyokazu Nagahara ◽  
Tomonori Mukai ◽  
Hiromitsu Hada ◽  
Nobuyuki Ishiwata ◽  
Naoki Kasai ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Random Access Memory ◽  
Access Memory ◽  
Hard Mask ◽  
Magnetic Random Access Memory

Etch characteristics of magnetic tunnel junction stack with nanometer-sized patterns for magnetic random access memory

2008 ◽  
Vol 516 (11) ◽  
pp. 3507-3511 ◽  
Author(s):  
Su Ryun Min ◽  
Han Na Cho ◽  
Kee Won Kim ◽  
Young Jin Cho ◽  
Sung-Hoon Choa ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Random Access Memory ◽  
Access Memory ◽  
Magnetic Random Access Memory

Magnetic Tunnel Junction (MTJ) Patterning for Magnetic Random Access Memory (MRAM) Process Applications

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L499-L501 ◽  
Author(s):  
Kiyokazu Nagahara ◽  
Tomonori Mukai ◽  
Nobuyuki Ishiwata ◽  
Hiromitu Hada ◽  
Shuichi Tahara
Keyword(s):  
Tunnel Junction ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Random Access Memory ◽  
Access Memory ◽  
Magnetic Random Access Memory

Nanometer-sized etching of magnetic tunnel junction stack for magnetic random access memory

2006 ◽  
Vol 304 (1) ◽  
pp. e264-e266 ◽  
Author(s):  
Ik Hyun Park ◽  
Su Ryun Min ◽  
Wang Hyun Park ◽  
Kyung Ho Shin ◽  
Chee Won Chung
Keyword(s):  
Tunnel Junction ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Random Access Memory ◽  
Access Memory ◽  
Magnetic Random Access Memory

Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory

2002 ◽  
Vol 91 (8) ◽  
pp. 5246-5249 ◽  
Author(s):  
Naoki Nishimura ◽  
Tadahiko Hirai ◽  
Akio Koganei ◽  
Takashi Ikeda ◽  
Kazuhisa Okano ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Perpendicular Magnetization ◽  
Junction Device
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