scholarly journals Influence of growth temperature on the vortex pinning properties of pulsed laser deposited YBa2Cu3O7−x thin films

2008 ◽  
Vol 103 (4) ◽  
pp. 043913 ◽  
Author(s):  
Z. Chen ◽  
F. Kametani ◽  
S. I. Kim ◽  
D. C. Larbalestier ◽  
H. W. Jang ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Pulsed Laser ◽  
Vortex Pinning ◽  
Pinning Properties

Pulsed Laser Deposition Thin Films of Pr0.7Sr0.3MnO3:  The Role of Growth Temperature

2000 ◽  
Vol 12 (10) ◽  
pp. 2858-2868 ◽  
Author(s):  
B. Mercey ◽  
J. Wolfman ◽  
W. Prellier ◽  
M. Hervieu ◽  
Ch. Simon ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Growth Temperature ◽  
Pulsed Laser ◽  
Laser Deposition

Growth temperature and N2 ambient pressure-dependent crystalline orientations and band gaps of pulsed laser-deposited AlN/(0001) sapphire thin films

2007 ◽  
Vol 304 (1) ◽  
pp. 257-263 ◽  
Author(s):  
Suhas M. Jejurikar ◽  
A.G. Banpurkar ◽  
Deepak N. Bankar ◽  
K.P. Adhi ◽  
L.M. Kukreja ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Band Gaps

EFFECT OF SUBSTRATE TEMPERATURE ON THE GROWTH OF COPPER OXIDE THIN FILMS DEPOSITED BY PULSED LASER DEPOSITION TECHNIQUE

2018 ◽  
Vol 25 (02) ◽  
pp. 1850053 ◽  
Author(s):  
MUHAMMAD KAIF SHABBIR ◽  
SHAZIA BASHIR ◽  
QAZI SALMAN AHMED ◽  
NAZISH YASEEN ◽  
SOHAIL ABDUL JALIL ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Copper Oxide ◽  
Growth Temperature ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Oxide Thin Films ◽  
Vis Spectroscopy ◽  
Substrate Temperatures ◽  
Deposited Films

The effect of substrate temperature on growth of pulsed laser deposited copper oxide thin films has been investigated by employing Nd: YAG laser (532[Formula: see text]nm, 6[Formula: see text]ns, 10[Formula: see text]Hz) irradiation at a fluence of 8.2[Formula: see text]J/cm2. XRD analysis reveals that copper oxide films deposited at room temperature are amorphous in nature, whereas films deposited at higher substrate temperatures are polycrystalline in nature. SEM and AFM analyses revealed that films deposited at substrate temperatures, ranging from room temperature to 300[Formula: see text]C are comprised of large sized clusters, islands and particulates, whereas uniform films with an appearance of granular morphology and distinct bump formation are grown at higher substrate temperatures of 400[Formula: see text]C and 500[Formula: see text]C. The optical bandgap of deposited films is evaluated by UV-VIS spectroscopy and shows a decreasing trend with increasing substrate temperature. Four point probe analysis reveals that electrical conductivity of the deposited films increases with increase in the substrate temperature, and is maximum for highest growth temperature of 500[Formula: see text]C. It is revealed that growth temperature plays a significant role for structure, texture, optical and electrical behavior of copper oxide thin films. The surface and structural properties of the deposited films are well correlated with their electrical and optical response.

Effects of growth temperature on Li–N dual-doped p-type ZnO thin films prepared by pulsed laser deposition

2008 ◽  
Vol 254 (7) ◽  
pp. 1993-1996 ◽  
Author(s):  
Y.Z. Zhang ◽  
J.G. Lu ◽  
Z.Z. Ye ◽  
H.P. He ◽  
L.P. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Growth Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
P Type

Effect of growth temperature on the magnetic, microwave, and cation inversion properties on NiFe2O4 thin films deposited by pulsed laser ablation deposition

2007 ◽  
Vol 101 (9) ◽  
pp. 09M517 ◽  
Author(s):  
C. N. Chinnasamy ◽  
S. D. Yoon ◽  
Aria Yang ◽  
Ashish Baraskar ◽  
C. Vittoria ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Growth Temperature ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation

A Study of High Quality Al-doped ZnO Thin Films Grown at Low Temperature by Pulsed Laser Deposition

2007 ◽  
Vol 1035 ◽  
Author(s):  
Ram Gupta ◽  
K. Ghosh ◽  
S. R. Mishra ◽  
P. K. Kahol
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Growth Temperature ◽  
Quartz Substrate ◽  
Resistivity Measurement ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Doped Zno

AbstractHighly conducting and transparent Al-doped ZnO (AZO) thin films, which are oriented along c-axis and have wurtzite structure, were grown on quartz substrate at low temperature by pulsed laser deposition. The techniques of x-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM), optical transmission spectroscopy (OTS), electrical resistivity, and Hall Effect were used to study the effect of growth temperature and oxygen pressure on the structural, electrical transport, and optical properties of these films. The optical transparency in all the films is high and does not change much with oxygen pressure and growth temperature. However, electrical parameters such as resistivity, carrier concentration, and mobility strongly depend on both oxygen pressure and growth temperature. The temperature dependence resistivity measurement indicates semiconducting behavior of all the films. A detailed study indicates that the films which are highly conducting and transparent correspond to an optimum temperature of 200 °C and an oxygen pressure of 5 × 10−7 bar. Higher transmittance of the AZO films compared with pure ZnO and ITO and comparable mobility make us to suggest that Al-doped ZnO is an excellent material for optoelectronic applications.

Sign in / Sign up

Export Citation Format

Share Document