ABSTRACTBallistic electron emission luminescence (BEEL) is a further development of ballistic electron emission microscopy (BEEM) combining three-terminal hot electron injection and interband radiative recombination in direct-gap semiconductor materials. By using a planar tunnel-junction emitter rather than a STM tip, a spectrographic analysis of the induced electroluminescence can be performed with the help of much higher current injection level. We demonstrate the operational principle of BEEL in a GaAs/AlxGa1−xAs heterostructure with a layer of InAs quantum dots (QDs) as the optical active layer. The wavelength-resolved BEEL spectra from planar tunnel-junction devices disclose the QD luminescence as a peak near 1.34 eV accompanied with a linear quantum-confined Stark shift. At higher collector voltage, luminescence from bulk states of GaAs peaked at 1.48 eV is observed. The spectrally integrated BEEL intensity as a function of collector voltage fits well with the results from STM tip injection, which is measured in a single-photon-counting mode. Measurement of ballistic electron current spectroscopy is made possible by freezing out the thermionic leakage current at low temperatures. Our results indicate that it is feasible to simultaneously acquire topographic, electronic and photonic information of buried light-emitting semiconductor heterostructures.
Erratum: “Ballistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in GaAs∕AlGaAs heterostructure” [Appl. Phys. Lett. 92, 012101 (2008)]
