Ballistic electron emission microscopy for local measurements of barrier heights on InAs self-assembled quantum dots on GaAs

2002 ◽  
Vol 314 (1-4) ◽  
pp. 81-85 ◽  
Author(s):  
D. Rakoczy ◽  
G. Strasser ◽  
J. Smoliner
Keyword(s):  
Quantum Dots ◽  
Electron Emission ◽  
Ballistic Electron Emission Microscopy ◽  
Barrier Heights ◽  
Ballistic Electron ◽  
Local Measurements ◽  
Emission Microscopy ◽  
Self Assembled

Imaging and Spectroscopy of Single InAs Self-Assembled Quantum Dots using Ballistic Electron Emission Microscopy

1996 ◽  
Vol 77 (26) ◽  
pp. 5268-5271 ◽  
Author(s):  
M. E. Rubin ◽  
G. Medeiros-Ribeiro ◽  
J. J. O'Shea ◽  
M. A. Chin ◽  
E. Y. Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Emission ◽  
Ballistic Electron Emission Microscopy ◽  
Ballistic Electron ◽  
Emission Microscopy ◽  
Self Assembled ◽  
Imaging And Spectroscopy

Study of InAs quantum dots in AlGaAs∕GaAs heterostructure by ballistic electron emission microscopy/spectroscopy

2007 ◽  
Vol 91 (4) ◽  
pp. 042110 ◽  
Author(s):  
J. Walachová ◽  
J. Zelinka ◽  
V. Malina ◽  
J. Vaniš ◽  
F. Šroubek ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Emission ◽  
Ballistic Electron Emission Microscopy ◽  
Inas Quantum Dots ◽  
Ballistic Electron ◽  
Emission Microscopy

The Ballistic Electron Emission Microscopy in the Characterization of Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 529-532
Author(s):  
S.D. Hutagalung ◽  
K.A. Yaacob ◽  
Y.C. Keat
Keyword(s):  
Quantum Dots ◽  
Electron Emission ◽  
Sio2 Layer ◽  
Scanning Tunneling ◽  
Conductive Layer ◽  
Ballistic Electron Emission Microscopy ◽  
Ballistic Electron ◽  
Electron Transport Properties ◽  
Emission Microscopy ◽  
P Type

Ballistic electron emission microscopy (BEEM) is a new method by apply the spatial resolution capabilities of the scanning tunneling microscope (STM) to investigate electron transport properties in the quantum dots. This method requires three terminals: a sharp tip to inject electrons, a conductive layer and a semiconductor substrate. The transport-related properties of the sample can be obtained by using the characteristic of the injected and collected electrons. In this paper proposed a BEEM model for the silicon quantum dots (Si-QDs) on SiO2 layer prepared by LPCVD technique. SiO2 layer was thermally grown on p-type Si (100) wafer in dry O2 atmosphere and a thin gold layer cap used to provide a conductive layer on top of the Si-QDs for the BEEM characterization.

scholarly journals Theory of ballistic electron emission microscopy

2001 ◽  
Vol 66 (1-2) ◽  
pp. 3-51 ◽  
Author(s):  
P.L. de Andres ◽  
F.J. Garcia-Vidal ◽  
K. Reuter ◽  
F. Flores
Keyword(s):  
Electron Emission ◽  
Ballistic Electron Emission Microscopy ◽  
Ballistic Electron ◽  
Emission Microscopy
Sign in / Sign up

Export Citation Format

Share Document