Magnetoresistance due to conduction band splitting in magnetic semiconductors

1975 ◽  
Author(s):  
R. L. Kautz ◽  
Y. Shapira
2007 ◽  
Vol 21 (08n09) ◽  
pp. 1632-1637 ◽  
Author(s):  
M. LENTZE ◽  
P. GRABS ◽  
J. GEURTS ◽  
K. RÖNNBURG ◽  
E. MOHLER ◽  
...  

We report on the analysis of the influence of carrier concentration on the exchange coupling between conduction band electrons and Mn d-electrons in diluted magnetic semiconductors. For this analysis we employed (i) electronic spin-flip Raman spectroscopy on heavily n-doped ( Zn , Mn ) Se , (ii) time-resolved Faraday rotation on optically pumped ( Cd , Mn ) Te . With increasing carrier density, a reduction of the exchange energy N0α up to 30 % is observed. It is explained by a weakening of the ferromagnetic character of the coupling of conducton-band electrons to the Mn d-electrons by an admixture of an antiferromagnetic (p-d) coupling contribution to the ferromagnetic (s-d) one for q ≠ 0.


2017 ◽  
Vol 19 (44) ◽  
pp. 29913-29917 ◽  
Author(s):  
Jikun Chen ◽  
Xinyou Ke ◽  
Jiaou Wang ◽  
Takeaki Yajima ◽  
Haijie Qian ◽  
...  

A distinct transportation characteristic of conduction band splitting is achieved by coupling the carriers with randomly distributed lattice-dipoles for strain-distorted SrNbxTi1−xO3/KTaO3.


1974 ◽  
Vol 47 (1) ◽  
pp. 39-40 ◽  
Author(s):  
Y. Shapira ◽  
R.L. Kautz ◽  
T.B. Reed

2004 ◽  
Vol 177 (4-5) ◽  
pp. 1704-1712 ◽  
Author(s):  
J. Navrátil ◽  
J. Horák ◽  
T. Plecháček ◽  
S. Kamba ◽  
P. Lošt’ák ◽  
...  

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