Thick oxidized porous silicon layer as thermo-insulating material for high temperature operating thin and thick film gas sensors

2002 ◽  
Author(s):  
P. Maccagnani ◽  
R. Angelucci ◽  
P. Pozzi ◽  
A. Poggi ◽  
L. Dori ◽  
...  
Keyword(s):  
High Temperature ◽  
Porous Silicon ◽  
Thick Film ◽  
Gas Sensors ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Insulating Material ◽  
Temperature Operating ◽  
Oxidized Porous Silicon

The improvement of thick oxidized porous silicon layer growth process

2006 ◽  
Author(s):  
Jian Li ◽  
Junming An ◽  
Hongjie Wang ◽  
Junlei Xia ◽  
Dingshan Gao ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Growth Process ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Growth ◽  
Oxidized Porous Silicon

Improvement of -SiC/Si pn diode high temperature characteristics with porous silicon layer

2000 ◽  
Vol 36 (1) ◽  
pp. 86 ◽  
Author(s):  
Wen-Tse Hsieh ◽  
Yean-Kuen Fang ◽  
W.J. Lee ◽  
Chi-Wei Ho ◽  
Kuen-Hsien Wu ◽  
...  
Keyword(s):  
High Temperature ◽  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Temperature Characteristics

Microstructure of pores in N+-silicon layers

1987 ◽  
Vol 45 ◽  
pp. 252-253
Author(s):  
V. S. Kaushik
Keyword(s):  
Porous Silicon ◽  
Hydrofluoric Acid ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Silicon On Insulator ◽  
Cross Sectional ◽  
Porous Layers ◽  
Doped Silicon ◽  
Oxidized Porous Silicon ◽  
P Type

Oxidized porous silicon has drawn considerable interest as one of the alternatives for implementing silicon-on-insulator technology. Buried porous layers can be formed by utilizing the preferential pore formation in highly doped silicon during anodic etching in hydrofluoric acid. This porous silicon layer (PSL) can be subsequently oxidized rapidly at low temperatures to yield a device-quality silicon island layer, which is dielectrically isolated from the substrate. Although pores can be formed in both n-type and p-type silicon, the latter has received more attention. This paper presents the results of cross-sectional TEM (XTEM) observations of the microstructure of pores in n+ silicon.Samples used in this study were n- /n+/n- doped silicon (001) wafers which had been anodically etched in a hydrofluoric acid solution to form the PSL in the n+ layer via trenches etched through the n- surface layer.

Ellipsometric characterization of oxidized porous silicon layer structures

2000 ◽  
Vol 69-70 ◽  
pp. 182-187 ◽  
Author(s):  
T Lohner ◽  
M Fried ◽  
P Petrik ◽  
O Polgár ◽  
J Gyulai ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Structures ◽  
Ellipsometric Characterization ◽  
Oxidized Porous Silicon

Effect of the Porous Silicon Layer Structure on Gas Adsorption

2020 ◽  
Vol 12 (4) ◽  
pp. 04020-1-04020-5
Author(s):  
A. P. Oksanich ◽  
◽  
S. E. Pritchin ◽  
M. A. Mashchenko ◽  
A. Yu. Bobryshev ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gas Adsorption ◽  
Layer Structure ◽  
Silicon Layer ◽  
Porous Silicon Layer
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