Hydrosilylation of 1‐dodecene on Nanostructured Porous Silicon Surface: Role of Current Density and Stabilizing Agent

2009 ◽  
Author(s):  
Shalini Singh ◽  
Shailesh N. Sharma ◽  
Govind ◽  
Mukhtar A. Khan ◽  
P. K. Singh
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Silicon Surface ◽  
Stabilizing Agent ◽  
Porous Silicon Surface

scholarly journals Morphological evolution of the porous silicon surface for different etching time and current density in hf-ethanol solution

2015 ◽  
Vol 34 (3) ◽  
pp. 89
Author(s):  
Miguel Angelo Do Amaral Junior ◽  
Belchior Elton Lima da Silva ◽  
Neidenêi Gomes Ferreira ◽  
Antonio Fernando Beloto ◽  
Maurício Ribeiro Baldan
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Silicon Surface ◽  
Morphological Evolution ◽  
Ethanol Solution ◽  
Etching Time ◽  
Porous Silicon Surface

Angular Ellipsometry of Porous Silicon Surface Layers

2020 ◽  
Vol 12 (3) ◽  
pp. 03024-1-03024-4
Author(s):  
L. V. Poperenko ◽  
◽  
S. G. Rozouvan ◽  
I. V. Yurgelevych ◽  
P. O. Lishchuk ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Surface Layers ◽  
Porous Silicon Surface

Chemical Modification of the Porous Silicon Surface

1994 ◽  
Vol 358 ◽  
Author(s):  
Eric J. Lee ◽  
James S. Ha ◽  
Michael J. Sailor
Keyword(s):  
Porous Silicon ◽  
Chemical Modification ◽  
Formic Acid ◽  
Gas Phase ◽  
Silicon Surface ◽  
Chemical Vapor ◽  
Luminescence Quenching ◽  
Porous Silicon Surface ◽  
Phase Water ◽  
Surface Modified

ABSTRACTThe porous silicon (PS) surface is derivatized with ethanol, triethylsilanol and formic acid as well as oxidized with water. The two reactions used to prepare these surfaces are discussed, and FTIR spectra of the products are presented. Surface-modified PS retains 10-40% of its original photoluminescence. PS-derivatives display reversible luminescence quenching by gas phase water, ethanol, acetonitrile and benzene. The extent of quenching varies with different PS-derivatives depending on the interaction of the chemical vapor with the modified PS surfaces.

Room‐temperature backbond oxidation of the porous silicon surface by oxygen radical irradiation

1995 ◽  
Vol 66 (7) ◽  
pp. 836-838 ◽  
Author(s):  
Patrick O’Keeffe ◽  
Yoshinobu Aoyagi ◽  
Shuji Komuro ◽  
Takashi Kato ◽  
Takitaro Morikawa
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Room Temperature ◽  
Oxygen Radical ◽  
Porous Silicon Surface

Grafting of functionalized polymer on porous silicon surface using Grignard reagent

2017 ◽  
Vol 421 ◽  
pp. 82-88 ◽  
Author(s):  
F-Z. Tighilt ◽  
S. Belhousse ◽  
S. Sam ◽  
K. Hamdani ◽  
K. Lasmi ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Grignard Reagent ◽  
Porous Silicon Surface
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