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The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors
Applied Physics Letters
◽
10.1063/1.3230069
◽
2009
◽
Vol 95
(12)
◽
pp. 121110
◽
Cited By ~ 4
Author(s):
Stephen Myers
◽
Elena Plis
◽
Arezou Khoshakhlagh
◽
Ha Sul Kim
◽
Yagya Sharma
◽
...
Keyword(s):
Optical Properties
◽
Infrared Detectors
◽
Type Ii
◽
Electrical And Optical Properties
◽
Strained Layer
◽
Strained Layer Superlattice
◽
Absorber Doping
Download Full-text
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Development of InAs/InAsSb Type II Strained-Layer Superlattice Unipolar Barrier Infrared Detectors
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◽
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Optical properties of a type-II GaAs/GaP strained-layer superlattice
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◽
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◽
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◽
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The emergence of InAs/InAsSb type-II strained layer superlattice barrier infrared detectors
Infrared Technology and Applications XLV
◽
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InAs/InAsSb Type-II Strained Layer Superlattice Barrier Infrared Detectors
2019 IEEE Photonics Conference (IPC)
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Extension of resonant cavity-enhanced photodetection into the MWIR and LWIR ranges using a Ga-free type-II strained-layer superlattice
Infrared Technology and Applications XLVI
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◽
2020
◽
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◽
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◽
Adam P. Craig
◽
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◽
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◽
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Strained Layer
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Passivation Study of InAs/GaSb Type-II Strained Layer Superlattice in Mid-wave Infrared Photodetector
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◽
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◽
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Type II strained layer superlattice: a potential infrared sensor material for space
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◽
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◽
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◽
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◽
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◽
Infrared Sensor
◽
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◽
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Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization
Journal of Crystal Growth
◽
10.1016/j.jcrysgro.2011.08.030
◽
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◽
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◽
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LWIR high performance focal plane arrays Based on type-II strained layer superlattice (SLS) materials
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◽
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High Performance
◽
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Type Ii
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Strained Layer Superlattice
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