Passivation Study of InAs/GaSb Type-II Strained Layer Superlattice in Mid-wave Infrared Photodetector

2020 ◽  
Vol 77 (9) ◽  
pp. 714-718
Author(s):  
Ha Sul Kim
Keyword(s):  
Type Ii ◽  
Infrared Photodetector ◽  
Strained Layer ◽  
Strained Layer Superlattice

scholarly journals InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors

Micromachines ◽  
2020 ◽  
Vol 11 (11) ◽  
pp. 958 ◽  
Author(s):  
David Z. Ting ◽  
Sir B. Rafol ◽  
Arezou Khoshakhlagh ◽  
Alexander Soibel ◽  
Sam A. Keo ◽  
...  
Keyword(s):  
Focal Plane ◽  
Review Paper ◽  
Operating Temperature ◽  
Infrared Detector ◽  
Type Ii ◽  
Infrared Photodetector ◽  
Strained Layer ◽  
Advantages And Disadvantages ◽  
Unipolar Barrier ◽  
Strained Layer Superlattice

The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in the last decade as a viable infrared detector material with a continuously adjustable band gap capable of accommodating detector cutoff wavelengths ranging from 4 to 15 µm and beyond. When coupled with the unipolar barrier infrared detector architecture, the InAs/InAsSb T2SLS mid-wavelength infrared (MWIR) focal plane array (FPA) has demonstrated a significantly higher operating temperature than InSb FPA, a major incumbent technology. In this brief review paper, we describe the emergence of the InAs/InAsSb T2SLS infrared photodetector technology, point out its advantages and disadvantages, and survey its recent development.

Development of InAs/InAsSb Type II Strained-Layer Superlattice Unipolar Barrier Infrared Detectors

2019 ◽  
Vol 48 (10) ◽  
pp. 6145-6151 ◽  
Author(s):  
David Z. Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sam A. Keo ◽  
Sir B. Rafol ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Type Ii ◽  
Strained Layer ◽  
Unipolar Barrier ◽  
Strained Layer Superlattice

Photonic jets for strained-layer superlattice infrared photodetector enhancement

2014 ◽  
Author(s):  
Kenneth W. Allen ◽  
Joshua M. Duran ◽  
Gamini Ariyawansa ◽  
Jarrett H. Vella ◽  
Nicholaos I. Limberopoulos ◽  
...  
Keyword(s):  
Infrared Photodetector ◽  
Strained Layer ◽  
Strained Layer Superlattice

Type II strained layer superlattice: a potential infrared sensor material for space

2008 ◽  
Author(s):  
L. Zheng ◽  
M. Z. Tidrow ◽  
A. Novello ◽  
H. Weichel ◽  
S. Vohra
Keyword(s):  
Type Ii ◽  
Infrared Sensor ◽  
Strained Layer ◽  
Sensor Material ◽  
Strained Layer Superlattice

Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

2011 ◽  
Vol 334 (1) ◽  
pp. 103-107 ◽  
Author(s):  
S.P. Svensson ◽  
D. Donetsky ◽  
D. Wang ◽  
H. Hier ◽  
F.J. Crowne ◽  
...  
Keyword(s):  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattice

LWIR high performance focal plane arrays Based on type-II strained layer superlattice (SLS) materials

2010 ◽  
Author(s):  
A. Hood ◽  
A. J. Evans ◽  
A. Ikhlassi ◽  
G. Sullivan ◽  
E. Piquette ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattice

Optimization of Surface Passivation for InAs-GaSb Infrared Photodetector

2008 ◽  
Vol 2 (1) ◽  
Author(s):  
E. Meyer ◽  
K. Banerjee ◽  
S. Ghosh
Keyword(s):  
Indium Arsenide ◽  
Gallium Antimonide ◽  
Surface Passivation ◽  
Infrared Imaging ◽  
Type Ii ◽  
Infrared Photodetector ◽  
Long Wavelength ◽  
Ammonium Sulfide ◽  
Strained Layer Superlattice ◽  
Long Wavelength Infrared

A type II indium arsenide / gallium antimonide (InAs-GaSb) strained layer superlattice (SLS) semiconductor is optimal for detecting long wavelength infrared (LWIR) signals for infrared imaging applications. However, as with all crystal structures dangling bonds at the surface of the semiconductor must be pacified with a passivant to maintain the integrity of the semiconductor. We report the most effective passivation layer for this III-V semiconductor by examining both the material and device characteristics of the devices pacified by silicon dioxide (SiO2), silicon nitride (SixNy), and zinc sulfide (ZnS). Our final reporting shows ZnS with a pre-passivation of ammonium sulfide ((NH4)2S) as being the most effective passivant.

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