ABSTRACTWe have performed a constant temperature classical molecular dynamics simulation of the epitaxial growth of a C60 monolayer film deposited on the dimerized Si(100) surface. Our simulation, based on non-central many-body inter-atomic potentials, is capable of predicting the structural stability of the C60 film and the Si substrate and provides a theoretical basis for the results of a recently-performed STM- based experiment for this system.Three-dimensional geometries have been generated on computer and used for the animation of the simulation runs.
Molecular Dynamics Simulation on Microstructure and Deformation Properties Related to Porosity in Al Thin Film Sputtered on Si Substrate.
