Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular‐beam epitaxy: Its effect on the device electrical characteristics

1986 ◽  
Vol 59 (10) ◽  
pp. 3601-3604 ◽  
Author(s):  
N. Chand ◽  
J. Klem ◽  
T. Henderson ◽  
H. Morkoç
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characteristics

Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
A.V. Voitsekhovskii ◽  
S.N. Nesmelov ◽  
S.M. Dzyadukh ◽  
V.S. Varavin ◽  
S.A. Dvoretskii ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Space Charge Region ◽  
Molecular Beam ◽  
Differential Resistance ◽  
Anodic Oxide ◽  
Electrical Characteristics ◽  
Near Surface ◽  
Wide Range ◽  
Minority Carriers ◽  
Mis Structures

AbstractThe paper examines influence of near-surface graded-gap layers on electrical characteristics of MIS-structures fabricated on heteroepitaxial Hg1−xCdxTe films grown by molecular beam epitaxy (MBE). Two types of insulators, i.e., two-layer SiO2/Si3N4 and anodic oxide films were used. As it is seen from the depth and width of the valley on the C-V characteristics, the capacitance is found to vary in a wide range, in contrast to the structures without graded-gap layers. It is shown that the graded-gap layer under MIS-structures with x = 0.22 effectively reduces the tunnelling generation via deep levels and increases a lifetime of minority carriers in the space charge region and its differential resistance. The properties of the HgCdTe-insulator interfaces are studied.

Electrical characteristics of GaAs grown on (Ca,Sr)F2 by molecular beam epitaxy

1987 ◽  
Vol 81 (1-4) ◽  
pp. 547-551 ◽  
Author(s):  
C. Fontaine ◽  
M. Berrabah ◽  
J. Nejjar ◽  
A. Munoz-Yague
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characteristics

Optical and electrical characteristics of Mn-doped InN grown by plasma-assisted molecular beam epitaxy

2011 ◽  
Vol 209 (1) ◽  
pp. 95-99 ◽  
Author(s):  
Jessica H. Chai ◽  
Young-Wook Song ◽  
Roger J. Reeves ◽  
Steven M. Durbin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characteristics ◽  
Mn Doped

Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on Gan by Plasma Assisted Gas Source Molecular Beam Epitaxy

2002 ◽  
Vol 743 ◽  
Author(s):  
A. H. Onstine ◽  
B. P. Gila ◽  
J. Kim ◽  
D. Stodilka ◽  
K. Allums ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Oxygen Pressure ◽  
Molecular Beam ◽  
Breakdown Field ◽  
Rf Plasma ◽  
Bulk Single Crystal ◽  
Electrical Characteristics ◽  
Ecr Plasma ◽  
Gas Source ◽  
Effect Of Oxygen

ABSTRACTThe effect of oxygen pressure on MgO grown by RF plasma assisted gas-source molecular beam epitaxy was investigated. Increasing oxygen pressure was found to decrease the growth rate, improve the morphology and reduce the Mg/O ratio to near that obtained from bulk single crystal MgO. By contrast, the electrical characteristics of MgO/GaN diodes showed continual improvement in breakdown field and interface state density as the pressure was decreased. The lowest pressure tested, 1×10−5Torr, produced the lowest Dit, 3×1011 eV−1cm−2, and the highest VBD, 4.4 MV/cm. Cross sectional transmission electron microscopy of the MgO grown at the lowest pressure showed the initial 40 monolayers to be epitaxial, with the remainder of the layer appearing to be fine grained poly-crystal. Comparisons with films grown using an electron cyclotron resonance (ECR) plasma suggest that higher ion energies are desirable for obtaining the best electrical characteristics.

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